E Series Power MOSFET
www.vishay.com
SiHJ8N60E
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) typ. at 2...
Description
www.vishay.com
SiHJ8N60E
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) typ. at 25 °C () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
650 VGS = 10 V
44 5 10 Single
0.45
PowerPAK® SO-8L Single
D
G
S N-Channel MOSFET
FEATURES
Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction losses Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS Switch mode power supplies (SMPS) Flyback converter Lighting
- High-intensity discharge (HID) - Fluorescent ballast lighting Consumer - Wall adaptors
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
PowerPAK SO-8L SiHJ8N60E-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current a
VGS at 10 V
TC = 25 °C TC = 100 °C
ID IDM
Linear Derating Factor
Single Pulse Avalanche Energy b
EAS
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Drain-Source Voltage Slope Reverse Diode dV/dt d
TJ = 125 °C
dV/dt
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 2.5 A c. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C
LIMIT 600 ± 30 8 5 18 0.71 88 ...
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