Dual Hot Carrier Mixer Diodes
MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G
Dual Hot Carrier Mixer Diodes
These ...
Description
MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G
Dual Hot Carrier Mixer Diodes
These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits.
Features
Very Low Capacitance − Less Than 1.0 pF @ Zero V Low Forward Voltage − 0.5 V (Typ) @ IF = 10 mA NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol Value
Unit
Continuous Reverse Voltage
VR
7.0
VCC
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C
PD
225
mW
1.8
mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina Substrate, (Note 2)
TA = 25°C Derate above 25°C
RqJA PD
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
Junction and Storage Temperature
TJ, Tstg
1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
417 −55 to +150
°C/W °C
www.onsemi.com
SOT−23 (TO−236) CASE 318
1
ANODE
3
CATHODE/ANODE
2 CATHODE
...
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