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NJD2873

Inchange Semiconductor
Part Number NJD2873
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Oct 17, 2016
Detailed Description isc Silicon NPN Power Transistor NJD2873 DESCRIPTION ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.3V(Max)(...
Datasheet PDF File NJD2873 PDF File

NJD2873
NJD2873

Overview
isc Silicon NPN Power Transistor NJD2873 DESCRIPTION ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.
3V(Max)( IC= 1A; IB= 50mA) ·DC Current Gain -hFE = 120(Min)@ IC= 0.
5A ·High Current-Gain—Bandwidth Product ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-gain audio amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current Total Power Dissipation PC @ TC=25℃ Collector Power Dissipation Ta=25...


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