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NJD1718 Dataheets PDF



Part Number NJD1718
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon PNP Power Transistor
Datasheet NJD1718 DatasheetNJD1718 Datasheet (PDF)

isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.5V(Max)( IC= -1A; IB= -0.05A) ·High Switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-gain audio amplifier and power Switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Col.

  NJD1718   NJD1718


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isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.5V(Max)( IC= -1A; IB= -0.05A) ·High Switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-gain audio amplifier and power Switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Total Power Dissipation @ TC=25℃ Collector Power Dissipation Ta=25℃ Junction Temperature -50 V -50 V -5 V -2 A -3 A -0.4 A 15 W 1.68 150 ℃ Tstg Storage Temperature Range -65~150 THERMAL CHARACTERISTICS SYMBO L PARAMETER MAX Rth j-c Thermal Resistance, Junction to Case 10 ℃ UNIT ℃/W Rth j-a Thermal Resistance,Junction to Ambient 89.3 ℃/W NJD1718 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V (BR)CEO Collector-Emitter Breakdown Voltage IC=-10mA, IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.05A VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -0.05A NJD1718 MIN TYP MAX UNIT -50 V -0.5 V -1.2 V VBE(on) Base-Emitter On Voltage IC= -1A ; VCE= -2V -1.2 V ICBO Collector Cutoff Current VCB= -50V; IE= 0 -100 nA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -100 nA hFE DC Current Gain IC= -0.5A; VCE= -2V 70 240 IC= -1.5A; VCE= -2V 40 fT Current-Gain—Bandwidth Product IC= -0.5A ;VCE= -2V 80 MHZ COB Output Capacitance Pulse Test: PW=300μs, Duty Cycle≤2.0% Switching Times; Resistive Load ton Tur-on Time ts Storage Time IE=0;VCB=-10V;f= 0.1MHz IC= -1A; VCC= -30V; 33 pF 55 ns 320 ns tf Fall Time 40 ns NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


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