MJD5731

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -350V(Min) ·High Switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line operated audio output amplifier SWITCHMODE power supply drivers and other switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO VEBO IC ICM PC TJ Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Total Power Dissipation @ TC=25℃ Collector Power Dissipation Ta=25℃ Junction Temperature -350 V -5 V -1.0 A -3.0 A 15 W 1.56 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBO L PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 8.33 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W MJD5731 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor MJD5731 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V (BR)CEO Collector-Emitter Breakdown Voltage IC=-30mA, IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.2A VBE(on) Base-Emitter On Voltage IC= -1A ; VCE= -10V MIN -350 TYP MAX UNIT V -1.0 V -1.5 V ICEO Collector Cutoff Current ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain VCE= -250V; IE= 0 VCB= -350V; IE= 0 VEB= -5V; IC...