isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -350V(Min) ·High Swit...
isc Silicon
PNP Power
Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -350V(Min) ·High Switching speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for line operated audio output amplifier
SWITCHMODE power supply drivers and other switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEO VEBO
IC ICM
PC
TJ
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak Total Power Dissipation @ TC=25℃ Collector Power Dissipation Ta=25℃
Junction Temperature
-350
V
-5
V
-1.0
A
-3.0
A
15 W
1.56
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBO L
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
8.33 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 80
℃/W
MJD5731
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
PNP Power
Transistor
MJD5731
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V (BR)CEO Collector-Emitter Breakdown Voltage IC=-30mA, IB=0
VCE(sat)
Collector-Emitter Saturation Voltage IC= -1A; IB= -0.2A
VBE(on)
Base-Emitter On Voltage
IC= -1A ; VCE= -10V
MIN -350
TYP MAX UNIT
V
-1.0
V
-1.5 V
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hFE
DC Current Gain
VCE= -250V; IE= 0
VCB= -350V; IE= 0
VEB= -5V; IC...