STB18NM60ND

STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND N-channel 600 V - 0.25 Ω typ., 13 A FDmesh™ II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet − production data TAB 3 1 D2PAK TAB 3 2 1 TO-220FP 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram '7$% *6 $0Y Features Order codes STB18NM60ND STF18NM60ND STP18NM60ND STW18NM60ND VDSS @ TJmax 650 V RDS(on) max ID <0.29 Ω 13 A The worldwide best RDS(on)* area amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities Applications Switching applications Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance a...