INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N3904
DESCRIPTION ·Low Saturation V...
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2N3904
DESCRIPTION ·Low Saturation Voltage-
: VCE(sat)= 200mV(Max)@ IC =10mA ·Complement to Type 2N3906.
APPLICATIONS ·Designed for high-speed switching and Amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
ICP Collector Current-Peak
IBM Peak base current
PC Collector Power Dissipation @TC=25℃
TJ Junction Temperature
Tstg Storage Temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
VALUE 60 40 6 200 300 100 625 150
-55~150
UNIT V V V mA mA mA
mW ℃ ℃
MAX 250
UNIT K/W
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INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2N3904
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise s...