2N3773L

INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@IC = 8A ·Low Saturation Voltage- : VCE(sat)= 1.4V(Max)@ IC = 8A ·Complement to Type 2N6609 APPLICATIONS ·Designed for high power audio ,disk head positioners and other linear applications, which can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEX Collector-Emitter Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 16 A ICP Collector Current-Peak 30 A IB Base Current-Continuous 4A IBP Base Current-Peak 15 A PC Collector Power Dissipation @TC=25℃ 150 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction ...