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2N3741R

Part Number	2N3741R
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistors
Published	Oct 14, 2016
Detailed Description	INCHANGE Semiconductor isc Silicon PNP Power Transistors isc Product Specification 2N3741R DESCRIPTION ·DC Current Gai...
Datasheet	2N3741R PDF File

Overview

INCHANGE Semiconductor isc Silicon PNP Power Transistors isc Product Specification 2N3741R DESCRIPTION ·DC Current Gain- : hFE= 30-100@IC= -250mA ·Wide Area of Safe Operation ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.
6 V(Max)@ IC = -1A ·High Gain ·Low Saturation Voltage APPLICATIONS ·Designed for use as drivers, switches and medium-power amplifier and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO VEBO IC ICM IB PC Tstg Collector-Emitter Voltage -80 V Emitter-Base Voltage -7 V Collector Current-Continuous -4 A Collector Current-Peak -10 A Base Current -2 A Collector Power Diss...

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