PHOTODIODE
SMP600G-EM
MECHANICAL DATA Dimensions in mm.
P.I.N. PHOTODIODE
WINDOW Ø 5.9 ± 0.1
Ø 9.1 ± 0.2 Ø 8.1 ± 0.1
SE NSITIV...
Description
SMP600G-EM
MECHANICAL DATA Dimensions in mm.
P.I.N. PHOTODIODE
WINDOW Ø 5.9 ± 0.1
Ø 9.1 ± 0.2 Ø 8.1 ± 0.1
SE NSITIVE SURF ACE
Ø 0.45 LEAD
5.08 ± 0.2
20 3.8 ± 0.2
FEATURES
HIGH SENSITIVITY VISIBLE AND UV BLIND EXCELLENT LINEARITY LOW NOISE WIDE SPECTRAL RESPONSE RG850 INTEGRAL OPTICAL FILTER TO39 HERMETIC METAL CAN PACKAGE EMI SCREENING MESH AVAILABLE
21
TO-39 Package
Pin 1 – Anode
Pin 2 – Cathode & Case
DESCRIPTION
The SMP600G-EM is a Silicon P.I.N. photodiode incorporated in a hermetic metal can package. The electrical terminations are via two leads of diameter 0.018" on a pitch of 0.2". The can structure incorporates an optical filter that only transmits infra-red light. The cathode of the photodiode is electrically connected to the package.
The larger photodiode active area provides greater sensitivity than the SMP550 range of devices, with a slight reduction in speed. Inherent in the device geometry is a reduction in the receiving angle. The photodiode structure has been optimised for high sensitivity, light measurement applications. The metal can and optional screening mesh ensure a rugged device with a high degree of immunity to radiated electrical interference.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
Operating temperature range Storage temperature range Temperature coefficient of responsively Temperature coefficient of dark current Reverse breakdown voltage
-40°C to +70°C -45°C to +80°C 0.35% per °C x2 per 8°C rise
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