MMBT3906

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 MMBT3906 PNP switching transistor Product data sheet Supersedes data of 2000 Apr 11 2003 Mar 18 NXP Semiconductors PNP switching transistor Product data sheet MMBT3906 FEATURES Collector current capability IC = −200 mA Collector-emitter voltage VCEO = −40 V. APPLICATIONS General switching and amplification. DESCRIPTION PNP switching transistor in a SOT23 plastic package. NPN complement: MMBT3904. MARKING TYPE NUMBER MMBT3906 MARKING CODE(1) 7B∗ Note 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. ∗ = W: Made in China. QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC collector-emitter voltage collector current (DC) MAX. UNIT −40 V −200 mA PINNING PIN 1 2 3 base emitter collector DESCRIPTION handbook, halfpage 3 3 1 1 Top view 2 MAM256 2 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. MIN. − − − − − − − −65 − −65 MAX. −40 −40 −6 −200 −200 −100 250 +150 150 +150 UNIT V V V mA mA mA mW °C...