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1N5392G

EIC discrete Semiconductors

GLASS PASSIVATED JUNCTION SILICON RECTIFIERS

1N5391G - 1N5399G PRV : 50 - 1000 Volts Io : 1.5 Amperes FEATURES : * * * * * Glass passivated chip High current capabil...


EIC discrete Semiconductors

1N5392G

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1N5391G - 1N5399G PRV : 50 - 1000 Volts Io : 1.5 Amperes FEATURES : * * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop GLASS PASSIVATED JUNCTION SILICON RECTIFIERS DO - 41 0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN. 0.205 (5.2) 0.166 (4.2) MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.339 gram 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 75°C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 1.5 Amps. Maximum DC Reverse Current at rated DC Blocking Voltage Ta = 25 °C Ta = 100 °C SYMBOL 1N 1N 1N 1N 1N 1N 1N 1N 1N 5391G 5392G 5393G 5394G 5395G 5396G 5397G 5398G 5399G UNIT VRRM VRMS VDC IF(AV) 50 35 50 100 70 100 200 140 200 300 210 300 400 280 400 1.5 500 350 500 600 420 600 800 560 800 1000 700 1000 Volts Volts Volts A...




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