SSF5510G

SSF5510G Preliminary FEATURES  Advanced trench process technology  Ultra low Rdson, typical 8mohm  High avalanche energy, 100% test  Fully characterized avalanche voltage and current  Lead free product ID =56A BV=55V R DS (ON) =8mohm （typ.） DESCRIPTION The SSF5510G is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SS5510G is assembled in high reliability and qualified assembly house. APPLICATIONS  Power switching application SSF5510G Top View Absolute Maximum Ratings Parameter ID@Tc=25ْ C Continuous drain current,VGS@10V ID@Tc=100Cْ Continuous drain current,VGS@10V IDM Pulsed drain current ① Power dissipation PD@TC=25ْC Linear derating factor VGS Gate-to-Source voltage dv/dt Peak diode recovery voltage EAS EAR TJ TSTG Single pulse avalanche energy ② Repetitive avalanche energy Operating Junction a...