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AM7922N

Analog Power

Dual N-Channel MOSFET

Analog Power AM7922N Dual N-Channel 20-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impe...


Analog Power

AM7922N

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Description
Analog Power AM7922N Dual N-Channel 20-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: Load Switches DC/DC Conversion Motor Drives VDS (V) 20 PRODUCT SUMMARY rDS(on) (mΩ) 7 @ VGS = 4.5V 8.5 @ VGS = 2.5V ID (A) 16 14 DFN5X6-8L ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS 16 12 60 4.3 Power Dissipation a TA=25°C TA=70°C PD 2.5 1.6 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum RθJA 50 90 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM7922N_1A Analog Power AM7922N Electrical Characteristics Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance a Diode Forward Voltage a Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol VGS(th) IGSS IDSS ID(on)...




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