AM2321P

Analog Power P-Channel 20-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits AM2321P VDS (V) -20 PRODUCT SUMMARY rDS(on) (mΩ) 79 @ VGS = -4.5V 110 @ VGS = -2.5V ID(A) -3.4 -2.9 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS -3.4 -2.6 -10 -1.9 Power Dissipation a TA=25°C TA=70°C PD 1.3 0.8 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum RθJA 100 166 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM2321P_1A Analog Power AM2321P Electrical Characteristics Parameter Symbol Test Conditions Min Typ Max Unit Static Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250 uA -0.4 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±8 V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = -16 V, VGS = 0 V VDS = -16 V, VGS = 0 V, TJ = 55°C -1 uA -25 On-State Drain Current a ID(on) VDS = -5 V, VGS = -4.5 V -5 A Dra...