AM2325P

Analog Power P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to pproowveidr elolsoswanrDdS(hoen)aat nddistsoipeantisounre. minimal Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. AM2325P PRODUCT SUMMARY VDS (V) -20 rDS(on) (OHM) 0.055 @ VGS = -4.5V 0.089 @ VGS = -2.5V 0.20 @ VGS = -1.8V ID (A) -3.6 -2.8 -1.8 Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOT-23 saves board space Fast switching speed High performance trench technology G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Symbol Ratings Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±12 Continuous Drain Currenta Pulsed Drain Currentb TA=25oC TA=70oC ID IDM -3.6 -2.9 -10 Continuous Source Current (Diode Conduction)a IS ±0.46 Power Dissipationa TA=25oC TA=70oC PD 1.25 0.8 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Units V A A W oC THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t <= 5 sec Steady-State Symbol RTHJA Maximum 100 166 Units oC/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 Publication Order Number: DS-AM2325_J Analog Power AM2325P SPECIFICATIONS (TA = 25oC UNLESS OTHERW...