P-Channel MOSFET
Analog Power
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize High Cell Density process. Low rD...
Description
Analog Power
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are DC-DC converters, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
Miniature SOT-23 Surface Mount Package Saves Board Space
Fast switching speed
High performance trench technology
AM2327P
PRODUCT SUMMARY
VDS (V) -20
rDS(on) (OHM) 0.052 @ VGS = -4.5V 0.072 @ VGS = -2.5V
0.120 @ VGS = -1.8V
ID (A) -3.6 -3.1 -2.7
G D
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Ratings Units
Drain-Source Voltage Gate-Source Voltage
VDS -20 V VGS ±8
Continuous Drain Currenta
TA=25oC TA=70oC
ID
-3.6 -1.8 A
Pulsed Drain Currentb
IDM -10
Continuous Source Current (Diode Conduction)a
IS ±0.46 A
Power Dissipationa Operating Junction and Storage Temperature Range
TA=25oC TA=70oC
PD
TJ, Tstg
1.25 0.8 -55 to 150
W oC
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta
t <= 5 sec Steady-State
Symbol RTHJA
Maximum 100 150
Units oC/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
July, 2002 - Rev. A PRELIMINARY
1
Publication Order Number: DS-AM2327_H
An...
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