AM7343P

Analog Power P-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DFN3x3-8PP saves board space Fast switching speed High performance trench technology AM7343P PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) -40 12 @ VGS = -10V 18 @ VGS = -4.5V DFN3x3-8PP Top View S1 S2 S3 G4 8 7 6 5 ID (A) -14 -12 S D DG D DD P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parame te r Symbol Maximum Units Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a Power Dissipationa Operating Junction and Storage Temperature Range VDS VGS TA=25oC TA=70oC ID -40 ±20 -14 -12 IDM ±50 IS TA=25oC TA=70oC PD -2.1 3.5 2.0 TJ, Tstg -55 to 150 V A A W oC THERMALRESISTANCERATINGS Parameter MaximumJunction-to-Ambienta t <=10 sec Steady State Symbol RθJA Maximum Units 35 oC/W 81 oC/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature PRELIMINARY 1 Publication Order Number: DS-AM7343_A Analog Power AM7343P SPECIFICATIONS (...