N-Channel MOSFET
Analog Power
N-Channel 30-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast sw...
Description
Analog Power
N-Channel 30-V (D-S) MOSFET
Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed
Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits
AM7402N
VDS (V) 30
PRODUCT SUMMARY rDS(on) (mΩ)
8.5 @ VGS = 10V 16 @ VGS = 4.5V
ID (A) 20 15
DFN5X6-8L
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current a
Pulsed Drain Current b Continuous Source Current (Diode Conduction) a
TA=25°C TA=70°C
ID
IDM IS
20 16 50 6.4
Power Dissipation a
TA=25°C TA=70°C
PD
5 3.2
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units V
A
A W °C
Maximum Junction-to-Ambient a
THERMAL RESISTANCE RATINGS Parameter
t <= 10 sec Steady State
Symbol Maximum
RθJA
25 65
Units °C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
© Preliminary
1 Publication Order Number: DS_AM7402N_1A
Analog Power
AM7402N
Electrical Characteristics
Parameter
Gate-Source Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a Drain-Source On-Resistance a
Forward Transconductance a Diode Forward Voltage a
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
...
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