Document
1N4728A to 1N4749A
Voltage regulator diodes
Rev. 02 — 30 October 2009
Product data sheet
1. Product profile
1.1 General description
Low voltage regulator diodes in hermetically sealed small SOD66 (DO-41) glass packages.
The series consists of 22 types with nominal working voltages from 3.3 to 24 V.
1.2 Features
I Total power dissipation: max. ≤ 1000 mW
I Working voltage range: nom. 3.3 V to 24 V
I Tolerance series: ±5 %
I Small hermetically sealed glass package
1.3 Applications
I Low voltage stabilizers
1.4 Quick reference data
Table 1. Symbol VF Ptot
Quick reference data Parameter forward voltage total power dissipation
Conditions IF = 200 mA
Min Typ Max Unit - - 1.2 V - - 1000 mW
2. Pinning information
Table 2. Pin 1 2
Pinning Description cathode anode
[1] The marking band indicates the cathode.
Simplified outline
[1] ka
Graphic symbol
12 006aaa152
NXP Semiconductors
1N4728A to 1N4749A
Voltage regulator diodes
3. Ordering information
4. Marking
Table 3. Ordering information
Type number
Package
Name
Description
1N4728A to 1N4749A[1]
-
hermetically sealed glass package; axial leaded; 2 leads
[1] The series consists of 22 types with nominal working voltages from 3.3 V to 24 V.
Version SOD66
Table 4. Marking codes Type number 1N4728A to 1N4749A
Marking code The diodes are type branded.
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
IF forward current IZ working current
-
IZSM non-repetitive peak reverse current
Ptot
total power dissipation
Tamb = 50 °C
Tj junction temperature
Tstg storage temperature
-
−65 −65
Max 500 see Table 8 see Table 8 1000 +200 +200
Unit mA
mW °C °C
1N4728A_SER_2
Product data sheet
Rev. 02 — 30 October 2009
© NXP B.V. 2009. All rights reserved.
2 of 10
NXP Semiconductors
1N4728A to 1N4749A
Voltage regulator diodes
6. Thermal characteristics
Table 6. Symbol Rth(j-t)
Thermal characteristics
Parameter
thermal resistance from junction to tie-point
Conditions lead length 4 mm
Min Typ Max Unit - - 110 K/W
103 Rth(j-t) (K/W)
102
10
1 10−1
δ=1 0.75 0.50 0.33 0.20 0.10 0.05
0.02 0.01 0
1
10
006aab843 102 103 104 tp (ms) 105
Fig 1. Thermal resistance from junction to tie-point as a function of pulse duration; lead length 4 mm
7. Characteristics
Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter
VF forward voltage
Conditions IF = 200 mA
Min Typ Max Unit - - 1.2 V
1N4728A_SER_2
Product data sheet
Rev. 02 — 30 October 2009
© NXP B.V. 2009. All rights reserved.
3 of 10
NXP Semiconductors
1N4728A to 1N4749A
Voltage regulator diodes
Table 8. Characteristics per type Tj = 25 °C unless otherwise specified.
Type number
Working voltage VZ (V)[1]
at Itest
Test current Itest (mA)
Differential resistance rdif (Ω)
at Itest at IZ
Nom
Max Max
1N4728A 3.3
76
10 400
1N4729A 3.6
69
10 400
1N4730A 3.9
64
9 400
1N4731A 4.3
58
9 400
1N4732A 4.7
53
8 500
1N4733A 5.1
49
7 550
1N4734A 5.6
45
5 600
1N4735A 6.2
41
2 700
1N4736A 6.8
37
3.5 700
1N4737A 7.5
34
4 700
1N4738A 8.2
31
4.5 700
1N4739A 9.1
28
5 700
1N4740A 10 25 7 700
1N4741A 11 23 8 700
1N4742A 12 21 9 700
1N4743A 13 19 10 700
1N4744A 15 17 14 700
1N4745A 16
15.5 16 700
1N4746A 18 14 20 750
1N4747A 20
12.5 22 750
1N4748A 22
11.5 23 750
1N4749A 24
10.5 25 750
Reverse current IR (µA)
Working current IZ (mA)
IZ (mA) Max
1 100
VR (V) Max 1 276
1 100 1 252
1 50 1 234
1 10 1 217
1 10 1 193
1 10 1 178
1 10 2 162
1 10 3 146
1 10 4 133
0.5 10
5 121
0.5 10
6 110
0.5 10
7 100
0.25 10
7.6 91
0.25 5
8.4 83
0.25 5
9.1 76
0.25 5
9.9 69
0.25 5
11.4 61
0.25 5
12.2 57
0.25 5
13.7 50
0.25 5
15.2 45
0.25 5
16.7 41
0.25 5
18.2 38
[1] VZ is measured with device at thermal equilibrium while held in clips at 10 mm from body in still air at 25 °C. [2] Half square wave or equivalent sine wave pulse 1/120 second duration superimposed on Itest.
Non-repetitive peak reverse current IZSM (mA)[2]
Max 1380 1260 1190 1070 970 890 810 730 660 605 550 500 454 414 380 344 304 285 250 225 205 190
1N4728A_SER_2
Product data sheet
Rev. 02 — 30 October 2009
© NXP B.V. 2009. All rights reserved.
4 of 10
NXP Semiconductors
1N4728A to 1N4749A
Voltage regulator diodes
300 IF (mA) 200
100
mbg925 (1) (2)
0 0 0.5 VF (V) 1.0
(1) Tj = 200 °C (2) Tj = 25 °C Fig 2. Forward current as a function of forward voltage; typical values
1N4728A_SER_2
Product data sheet
Rev. 02 — 30 October 2009
© NXP B.V. 2009. All rights reserved.
5 of 10
NXP Semiconductors
8. Package outline
Hermetically sealed glass package; axial leaded; 2 leads
1N4728A to 1N4749A
Voltage regulator diodes
SOD66
(1) k
D L G1
Dimensions
Unit b D G1 L
max 0.81 2.6 mm nom
min
4.8 25.4
Note 1. The marking band indicates the cathode.
Outline version
IEC
SOD66
References
JEDEC
JEITA
DO-41
Fig 3. Package outline SOD66 (DO-41)
a b
L
0 2 4 mm sc.