AM20P10-250D

Analog Power P-Channel 100-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost converters AM20P10-250D VDS (V) -100 PRODUCT SUMMARY rDS(on) (mΩ) 295 @ VGS = -10V 590 @ VGS = -4.5V ID(A) -11 -8 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS -100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current b TC=25°C ID IDM -11 -40 Continuous Source Current (Diode Conduction) IS -15 Power Dissipation TC=25°C PD 50 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 Units V A A W °C Maximum Junction-to-Ambient a Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 40 3 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM20P10-250D_1A Analog Power AM20P10-250D Typical Electrical Characteristics Parameter Symbol Test Conditions Min Typ Max Unit Static Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250 uA -1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ±20 V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = -80 V, VGS = 0 V VDS = -80 V, VGS = 0 V, TJ = 55°C -1 uA -10 On-State Drain Current ID(on) VDS = -5 V, VGS = -10 V -...