Document
Analog Power
N-Channel 100-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed
Typical Applications: • PoE Power Sourcing Equipment • PoE Powered Devices • Telecom DC/DC converters • White LED boost converters
AM40N10-30D
VDS (V) 100
PRODUCT SUMMARY rDS(on) (mΩ)
36 @ VGS = 10V 42 @ VGS = 4.5V
ID(A) 26 24
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current b
TC=25°C
ID IDM
26 50
Continuous Source Current (Diode Conduction)
IS 50
Power Dissipation
TC=25°C
PD
50
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
Units V
A A W °C
Maximum Junction-to-Ambient a Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS Parameter
Symbol RθJA RθJC
Maximum 50 3
Units °C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
© Preliminary
1 Publication Order Number: DS-AM40N10-30D
Analog Power
AM40N10-30D
Typical Electrical Characteristics
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static
Gate-Source Threshold Voltage VGS(th)
VDS = VGS, ID = 250 uA
1
3.5 V
Gate-Body Leakage
IGSS VDS = 0 V, VGS = 20 V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 80 V, VGS = 0 V VDS = 80 V, VGS = 0 V, TJ = 55°C
1 uA 25
On-State Drain Current
ID(on)
VDS = 5 V, VGS = 10 V
34
A
Drain-Source On-Resistance
rDS(on)
VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 9.2 A
36 mΩ 42
Forward Transconductance
gfs
VDS = 15 V, ID = 10 A
10 S
Diode Forward Voltage
VSD IS = 25 A, VGS = 0 V
0.89 V
Dynamic
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Qg Qgs Qgd td(on)
tr td(off)
tf Ciss Coss Crss
VDS = 50 V, VGS = 4.5 V, ID = 10 A
VDD = 50 V, RL = 5 Ω , ID = 10 A, VGEN = 10 V, RGEN = 6 Ω
VDS = 15 V, VGS = 0 V, f =1 MHz
14.8 4.3 8.6 4.8 14.2 39.2 25.6 1216 154 131
nC nS pF
Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
© Preliminary
2 Publication Order Number: DS-AM40N10-30D
Analog Power
AM40N10-30D
Typical Electrical Characteristics
RDS(on) - On-Resistance (Ω)
0.1 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01
0 0
3.5V
4.0V 4.5V 6.0V 8.0V 10V
5 10 15 20 ID-Drain Current (A)
1. On-Resistance vs. Drain Current
ID - Drain Current (A)
20 18 TJ = 25°C 16 14 12 10
8 6 4 2 0
0123 VGS - Gate-to-Source Voltage (V) 2. Transfer Characteristics
4
RDS(on) - On-Resistance (Ω)
0.2 0.18 0.16
TJ = 25°C ID = 10A
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
IS - Source Current (A)
100 TJ = 25°C
10
1
0.1
0.01 0
0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) 4. Drain-to-Source Forward Voltage
ID - Drain Current (A)
20 18 16 14 12 10
8 6 4 2 0
0
© Preliminary
10V8.0V 6.0V 4.5V 4.0V 3.5V
3.0V
0.5 1 VDS - Drain-to-Source Voltage (V)
5. Output Characteristics
1.5
3
Capacitance (pf)
2500 2000
F = 1Mhz
1500 1000
Ciss
500
0 0
Coss Crss
5 10 .