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AM40N10-30D Dataheets PDF



Part Number AM40N10-30D
Manufacturers Analog Power
Logo Analog Power
Description N-Channel MOSFET
Datasheet AM40N10-30D DatasheetAM40N10-30D Datasheet (PDF)

Analog Power N-Channel 100-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • PoE Power Sourcing Equipment • PoE Powered Devices • Telecom DC/DC converters • White LED boost converters AM40N10-30D VDS (V) 100 PRODUCT SUMMARY rDS(on) (mΩ) 36 @ VGS = 10V 42 @ VGS = 4.5V ID(A) 26 24 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Volt.

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Analog Power N-Channel 100-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • PoE Power Sourcing Equipment • PoE Powered Devices • Telecom DC/DC converters • White LED boost converters AM40N10-30D VDS (V) 100 PRODUCT SUMMARY rDS(on) (mΩ) 36 @ VGS = 10V 42 @ VGS = 4.5V ID(A) 26 24 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current b TC=25°C ID IDM 26 50 Continuous Source Current (Diode Conduction) IS 50 Power Dissipation TC=25°C PD 50 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 Units V A A W °C Maximum Junction-to-Ambient a Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Parameter Symbol RθJA RθJC Maximum 50 3 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS-AM40N10-30D Analog Power AM40N10-30D Typical Electrical Characteristics Parameter Symbol Test Conditions Min Typ Max Unit Static Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 uA 1 3.5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = 20 V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 80 V, VGS = 0 V VDS = 80 V, VGS = 0 V, TJ = 55°C 1 uA 25 On-State Drain Current ID(on) VDS = 5 V, VGS = 10 V 34 A Drain-Source On-Resistance rDS(on) VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 9.2 A 36 mΩ 42 Forward Transconductance gfs VDS = 15 V, ID = 10 A 10 S Diode Forward Voltage VSD IS = 25 A, VGS = 0 V 0.89 V Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VDS = 50 V, VGS = 4.5 V, ID = 10 A VDD = 50 V, RL = 5 Ω , ID = 10 A, VGEN = 10 V, RGEN = 6 Ω VDS = 15 V, VGS = 0 V, f =1 MHz 14.8 4.3 8.6 4.8 14.2 39.2 25.6 1216 154 131 nC nS pF Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. © Preliminary 2 Publication Order Number: DS-AM40N10-30D Analog Power AM40N10-30D Typical Electrical Characteristics RDS(on) - On-Resistance (Ω) 0.1 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 0 3.5V 4.0V 4.5V 6.0V 8.0V 10V 5 10 15 20 ID-Drain Current (A) 1. On-Resistance vs. Drain Current ID - Drain Current (A) 20 18 TJ = 25°C 16 14 12 10 8 6 4 2 0 0123 VGS - Gate-to-Source Voltage (V) 2. Transfer Characteristics 4 RDS(on) - On-Resistance (Ω) 0.2 0.18 0.16 TJ = 25°C ID = 10A 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage IS - Source Current (A) 100 TJ = 25°C 10 1 0.1 0.01 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) 4. Drain-to-Source Forward Voltage ID - Drain Current (A) 20 18 16 14 12 10 8 6 4 2 0 0 © Preliminary 10V8.0V 6.0V 4.5V 4.0V 3.5V 3.0V 0.5 1 VDS - Drain-to-Source Voltage (V) 5. Output Characteristics 1.5 3 Capacitance (pf) 2500 2000 F = 1Mhz 1500 1000 Ciss 500 0 0 Coss Crss 5 10 .


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