P-Channel MOSFET
Analog Power
P-Channel 200-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast s...
Description
Analog Power
P-Channel 200-V (D-S) MOSFET
Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed
Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits
AM10P20-1400D
VDS (V) -200
PRODUCT SUMMARY rDS(on) (mΩ)
1400 @ VGS = -10V 1600 @ VGS = -5.5V
ID (A) -4.9 -4.6
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS -200
Gate-Source Voltage
Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a
TC=25°C TC=25°C
VGS ID IDM IS PD
±20 -4.9 -20 -10 50
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
Units V
A A W °C
Maximum Junction-to-Ambient a Maximum Junction-to-Case
THERMAL RESISTANCE RATINGS Parameter
Symbol RθJA RθJC
Maximum 40 3
Units °C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
© Preliminary
1 Publication Order Number: DS_AM10P20-1400D_1A
Analog Power
AM10P20-1400D
Electrical Characteristics
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static
Gate-Source Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a Drain-Source On-Resistance a
Forward Transconductance a Diode Forward Voltage a
VGS(th) IGSS
IDSS
ID(on)
rDS(on)
gfs VSD
VDS = VGS, ID = -250 uA VDS = 0 V, VGS = ±20 V VDS = -160 V, VGS = 0 V VDS = -160 V, V...
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