Document
SEMICONDUCTOR
TECHNICAL DATA
BEST SUITED FOR OVERVOLTAGE PROTECTION OF ELECTRONIC SYSTEM : ELECTRONIC SYSTEM FOR USE IN AUTOMOBILES ELECTRONIC SYSTEM FOR COMMERCIAL USE ELECTRONIC SYSTEM FOR INDUSTRIAL USE FOR COMMUNICATIONS, CONTROLS, MEASURING INSTRUMENTS, ETC.
FEATURES High surge power withstanding capabilities that absorb load dump surge. Excellent surge responsibility for steep surge absorption. Surface mount type is available for easy applications. Corresponds to taping packages. Automotive AEC Q101 Qualified. MSL Level 1 guaranteed (Tpeak = 260 )
MAXIMUM RATINGS (Ta=25 )
CHARACTERISTIC
SYMBOL
Allowable Power Dissipation (Note 1) Non-Repetitive Peak Reverse Surge Current (See Fig.1 for the exponents.)
P IRSM
Peak 1-Cycle Surge Forward Current (Single Half Sine-wave, t=10ms)
IFSM
Junction Temperature
Tj
Storage Temperature Range
Tstg
Note 1 : Lead tip temperature TL=25 .
RATING 5
50
700 -55 175 -40 150
UNIT W A
A
A FB IJ
K L
Z5W48V
ZENER DIODE SILICON DIFFUSED-JUNCTION TYPE
C D E
ANODE
G
ANODE
DIM A B C D E F G H I J K L
MILLIMETERS 10.0+_ 0.5 8.5+_ 0.5 10.0+_ 0.3 13.5+_ 0.3
15.5+_ 0.5 5.0+_ 0.3 9.0+_ 0.3 2.0+_ 0.5 3.0 +_ 0.5 2.7+_ 0.5 3.3+_ 0.5 7.6 +_ 0.5
H
CATHODE
Weight : 2.5g
CATHODE
DO-218
I RSM I RSM
2
0 10ms
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Zener Voltage Operating Resistance
VZ rd
Temperature Coefficient
T
Forward Voltage
VF
Reverse Current
IR
TEST CONDITION IZ=10mA IZ=10mA IZ=10mA IF=6A IF=100A VR=38.4V
2009. 7. 31
Revision No : 3
MIN. 43.2
-
TYP. 48.0
39 -
MAX. 52.8 65 62 1.0 1.2 10
UNIT V
mV/ V V A
1/2
ALLOWABLE POWER DISSIPATION P (W)
Z5W48V
P - TL , Ta
6 5 4 TL-P
Size
Solder round
Substrate
Size Thickness
a b c
Glass/epoxy substrate
10mm 50mm 1.5mm
3
2 Ta-P
1
TL
Ca b
0 0 50 100 150 200
LEAD TEMPERATURE TL , AMBIENT TEMPERATURE Ta ( C)
ZENER CURRENT IZ (A)
I Z - VZ
100
10
1
0.1 46
47 48 49 50 51 52 ZENER VOLTAGE VZ (V)
53
SURGE ABSORPTION CAPABILITY PRSM (W)
PRSM - tW
10 5 tW
PRSM
10 4 Rectangular Pulse
10 3 DESIGN RECOMMENDED REGION
10 2
10 1 0.1
1 10 PULSE WIDTH tW (ms)
100
TRANSIENT THERMAL RESISTANCE Rth ( C)
R th - t
100
Rth(j-a) 10
1 Rth(j-D)
0.1
0.01 0.001 0.01
Typical R th(j-D) : Transient Thermal Resistance between junction and anode electrode.
0.1 1 10 100 1K
TIME t (S)
2009. 7. 31
Revision No : 3
INSTANEOUSFORWARD CURRENT IF (A) Tj =150 C
100 C 25 C
IF - VF
100
10
1
0.1 0.3 0.5 0.7 0.9 1.1 1.3 INSTANTANEOUS FORWARD VOLTAGE VF (V)
2/2
.