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Z5W48V Dataheets PDF



Part Number Z5W48V
Manufacturers KEC
Logo KEC
Description ZENER DIODE
Datasheet Z5W48V DatasheetZ5W48V Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA BEST SUITED FOR OVERVOLTAGE PROTECTION OF ELECTRONIC SYSTEM : ELECTRONIC SYSTEM FOR USE IN AUTOMOBILES ELECTRONIC SYSTEM FOR COMMERCIAL USE ELECTRONIC SYSTEM FOR INDUSTRIAL USE FOR COMMUNICATIONS, CONTROLS, MEASURING INSTRUMENTS, ETC. FEATURES High surge power withstanding capabilities that absorb load dump surge. Excellent surge responsibility for steep surge absorption. Surface mount type is available for easy applications. Corresponds to taping packages. Automot.

  Z5W48V   Z5W48V



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SEMICONDUCTOR TECHNICAL DATA BEST SUITED FOR OVERVOLTAGE PROTECTION OF ELECTRONIC SYSTEM : ELECTRONIC SYSTEM FOR USE IN AUTOMOBILES ELECTRONIC SYSTEM FOR COMMERCIAL USE ELECTRONIC SYSTEM FOR INDUSTRIAL USE FOR COMMUNICATIONS, CONTROLS, MEASURING INSTRUMENTS, ETC. FEATURES High surge power withstanding capabilities that absorb load dump surge. Excellent surge responsibility for steep surge absorption. Surface mount type is available for easy applications. Corresponds to taping packages. Automotive AEC Q101 Qualified. MSL Level 1 guaranteed (Tpeak = 260 ) MAXIMUM RATINGS (Ta=25 ) CHARACTERISTIC SYMBOL Allowable Power Dissipation (Note 1) Non-Repetitive Peak Reverse Surge Current (See Fig.1 for the exponents.) P IRSM Peak 1-Cycle Surge Forward Current (Single Half Sine-wave, t=10ms) IFSM Junction Temperature Tj Storage Temperature Range Tstg Note 1 : Lead tip temperature TL=25 . RATING 5 50 700 -55 175 -40 150 UNIT W A A A FB IJ K L Z5W48V ZENER DIODE SILICON DIFFUSED-JUNCTION TYPE C D E ANODE G ANODE DIM A B C D E F G H I J K L MILLIMETERS 10.0+_ 0.5 8.5+_ 0.5 10.0+_ 0.3 13.5+_ 0.3 15.5+_ 0.5 5.0+_ 0.3 9.0+_ 0.3 2.0+_ 0.5 3.0 +_ 0.5 2.7+_ 0.5 3.3+_ 0.5 7.6 +_ 0.5 H CATHODE Weight : 2.5g CATHODE DO-218 I RSM I RSM 2 0 10ms ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Zener Voltage Operating Resistance VZ rd Temperature Coefficient T Forward Voltage VF Reverse Current IR TEST CONDITION IZ=10mA IZ=10mA IZ=10mA IF=6A IF=100A VR=38.4V 2009. 7. 31 Revision No : 3 MIN. 43.2 - TYP. 48.0 39 - MAX. 52.8 65 62 1.0 1.2 10 UNIT V mV/ V V A 1/2 ALLOWABLE POWER DISSIPATION P (W) Z5W48V P - TL , Ta 6 5 4 TL-P Size Solder round Substrate Size Thickness a b c Glass/epoxy substrate 10mm 50mm 1.5mm 3 2 Ta-P 1 TL Ca b 0 0 50 100 150 200 LEAD TEMPERATURE TL , AMBIENT TEMPERATURE Ta ( C) ZENER CURRENT IZ (A) I Z - VZ 100 10 1 0.1 46 47 48 49 50 51 52 ZENER VOLTAGE VZ (V) 53 SURGE ABSORPTION CAPABILITY PRSM (W) PRSM - tW 10 5 tW PRSM 10 4 Rectangular Pulse 10 3 DESIGN RECOMMENDED REGION 10 2 10 1 0.1 1 10 PULSE WIDTH tW (ms) 100 TRANSIENT THERMAL RESISTANCE Rth ( C) R th - t 100 Rth(j-a) 10 1 Rth(j-D) 0.1 0.01 0.001 0.01 Typical R th(j-D) : Transient Thermal Resistance between junction and anode electrode. 0.1 1 10 100 1K TIME t (S) 2009. 7. 31 Revision No : 3 INSTANEOUSFORWARD CURRENT IF (A) Tj =150 C 100 C 25 C IF - VF 100 10 1 0.1 0.3 0.5 0.7 0.9 1.1 1.3 INSTANTANEOUS FORWARD VOLTAGE VF (V) 2/2 .


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