N-Channel MOSFET
N-Channel MOSFET
Applications:
● Power Supply ● DC-DC Converters
MM1 09 N06K Datasheet
VDSS 60V
RDS(ON)(MAX) 8mΩ
IDa...
Description
N-Channel MOSFET
Applications:
● Power Supply ● DC-DC Converters
MM1 09 N06K Datasheet
VDSS 60V
RDS(ON)(MAX) 8mΩ
IDa 109A
Features:
● Lead Free ● Low RDS(ON) to Minimize Conductive Loss ● Low Gate Charge for Fast Switching Application ● Optimized BVDSS Capability
Ordering Information
Park Number
Package Brand
MM109N06K TO-220 MacMic
Absolute Maximum Ratings
TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS Drain-to-Source Voltage
60
IDa Continuous Drain Current IDM Pulsed Drain Current @VG=10V
109 436
PD
Power Dissipation Derating Factor above 25℃
150 1.00
VGS Gate-to-Source Voltage
+/-20
EAS
Single Pulse Avalanche Energy (L=1mH, IAS=40A)
800
IAS Pulsed Avalanche Energy
Figure 7
TJ and TSTG Operating Junction and Storage Temperature Range
-55 to 175
Unit V
A
W W/℃
V
mJ
A ℃
Thermal Resistance
Symbol
Parameter
RθJC Junction-to-Case
RθJA Junction-to-Ambient
Min Typ Max Unit
Test Conditions
Water cooled heatsink, PD
1.00
℃/W
adjusted for a peak junction Temperature of 175℃
62 1 cubic foot chanber, free air
Note: a: Calculated continuous current based upon maximum allowable junction temperature +175℃. Package limitation current is 80A.
Page1
OFF Characteristics
Symbol
Parameter
BVDSS Drain-to-Source Breakdown Voltage
IDSS Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
TJ=25℃ unless otherwise specified
Min Typ Max Unit
Test Conditions
60 V VGS=0V, ID=250uA
1 100
...
Similar Datasheet