MASW-011021-14010G

MASW-011021 SURMOUNTTM Silicon PIN Diode SPDT Switch 6 - 14 GHz Features  Specified from 8 GHz to 12 GHz  Low Insertion Loss  High Isolation  Low Parasitic Capacitance and Inductance  Surface Mountable, Fully Monolithic Die  Glass Encapsulated Construction  20 W Pulsed Power Handling5  Silicon Nitride Passivation  Polymer Scratch Protection  RoHS* Compliant Rev. V3 Description This device is a SURMOUNT™ X-Band monolithic SPDT switch designed for high power, high performance applications. This Surface Mount chipscale configuration is designed with minimal parasitics usually associated with hybrid MIC designs incorporating beam lead and/or bondable PIN diodes that require chip and wire assembly. This device is fabricated using M/A-COM Technology Solutions’ patented HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes and/or vias by embedding them in low loss, low dispersion glass. Selective backside metalization is applied producing a surface mount device. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and the anode airbridge during handling and assembly. Functional Schematic J1 J3 B2 J2 B1 Pin Configuration 1 Pin Function J1 RF C J2 RF 1 J3 RF 2 B1 Bias 1 B2 Bias 2 1. The exposed pad centered on the chip botto...