Silicon PIN Diode SPDT Switch
MASW-011021
SURMOUNTTM Silicon PIN Diode SPDT Switch 6 - 14 GHz
Features
Specified from 8 GHz to 12 GHz Low Inserti...
Description
MASW-011021
SURMOUNTTM Silicon PIN Diode SPDT Switch 6 - 14 GHz
Features
Specified from 8 GHz to 12 GHz Low Insertion Loss High Isolation Low Parasitic Capacitance and Inductance Surface Mountable, Fully Monolithic Die Glass Encapsulated Construction 20 W Pulsed Power Handling5 Silicon Nitride Passivation Polymer Scratch Protection RoHS* Compliant
Rev. V3
Description
This device is a SURMOUNT™ X-Band monolithic SPDT switch designed for high power, high performance applications. This Surface Mount chipscale configuration is designed with minimal parasitics usually associated with hybrid MIC designs incorporating beam lead and/or bondable PIN diodes that require chip and wire assembly.
This device is fabricated using M/A-COM Technology Solutions’ patented HMIC™ (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes and/or vias by embedding them in low loss, low dispersion glass.
Selective backside metalization is applied producing a surface mount device. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and the anode airbridge during handling and assembly.
Functional Schematic
J1 J3
B2
J2 B1
Pin Configuration 1
Pin Function J1 RF C J2 RF 1 J3 RF 2 B1 Bias 1 B2 Bias 2
1. The exposed pad centered on the chip botto...
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