TGA2976-SM

Applications  Commercial and military radar  Communications  Electronic Warfare TGA2976-SM 0.1 – 3.0 GHz 10 W GaN Power Amplifier Product Features  Frequency Range: 0.1 – 3.0 GHz  PSAT: >40 dBm at PIN = 27 dBm  PAE: 48% @ midband  Large Signal Gain: >13 dB  Small Signal Gain: >20 dB  Bias: VD = 40 V, IDQ = 360 mA, VG1 = -2.4 V Typical, VG2 = +17.7 V Typical  Wideband Flat Gain and Power  Package Dimensions: 4.0 x 4.0 x 1.64 mm AC-QFN 4x4 mm 14L Functional Block Diagram 14 13 12 11 1 RF IN 2 3 10 9 RF OUT 8 4 567 General Description Pad Configuration Qorvo’s TGA2976-SM is a wideband cascode amplifier fabricated on Qorvo’s production 0.25um GaN on SiC process. The cascode configuration offers exceptional wideband performance as well as supporting 40 V operation. The TGA2976-SM operates from 0.1 - 3.0 GHz and provides greater than 10 W of saturated output power with greater than 13 dB of large signal gain and greater than 38% power-added efficiency. The TGA2976-SM is available in a low-cost, surface mount 14 lead 4x4 Air Cavity laminate package. It is ideally suited to support both radar and communication applications across defense and commercial markets as well as electronic warfare. The TGA2976-SM is fully matched to 50Ω at both RF ports allowing for simple system integration. DC blocks are required on both RF ports and the drain voltage must be injected through an off chip bias-tee on the RF output port. Lead-free and RoHS compliant. Evaluation boards are...