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TGA2590-CP

TriQuint Semiconductor

30W GaN Power Amplifier

Applications  Electronic Warfare  Commercial and Military Radar TGA2590-CP 6 to 12GHz, 30W GaN Power Amplifier Produ...


TriQuint Semiconductor

TGA2590-CP

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Description
Applications  Electronic Warfare  Commercial and Military Radar TGA2590-CP 6 to 12GHz, 30W GaN Power Amplifier Product Features  Frequency Range: 6 - 12 GHz  POUT: > 45 dBm (PIN = 23 dBm)  PAE: > 30 % (PIN = 23 dBm)  Small Signal Gain: 35 dB  Bias: VD = 20 V (CW), IDQ = 2 A, VG = −2.4 V typ.  Package Dimensions: 15.24 x 15.24 x 3.5 mm Functional Block Diagram 1 10 29 38 47 56 General Description TriQuint's TGA2590-CP is a wideband MMIC power amplifier fabricated on TriQuint's production 0.25um GaN on SiC process. The TGA2590-CP operates from 6-12GHz and provides 30W of saturated output power with >22dB of large signal gain and >30% power-added efficiency. The TGA2590-CP is offered in a Cu-base package that can either be bolted down or eutectically attached for superior thermal management. The TGA2590-CP is fully matched to 50 Ω with DC blocking caps at both RF ports allowing for simple system integration. The broadband performance supports both electronic warfare and radar opportunities across defense and commercial markets. Lead-free and RoHS compliant. Evaluation boards are available upon request. Pin Configuration Pad No. 1, 5 2, 4, 7, 9 3 6, 10 8 Symbol VG Gnd RFIN VD RFOUT Ordering Information Part TGA2590-CP ECCN Description 3A001.b.2.b 6-12GHz 30W PA Preliminary Datasheet: RevA 06-05-15 © 2015 TriQuint - 1 of 11 - Disclaimer: Subject to change without notice www.triquint.com TGA2590-CP 6 to 12GHz, 30W GaN Power Amplifier Absolute Maximum Ratings ...




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