Document
Applications
Commercial and military radar Communications Electronic Warfare
TGA2237
0.03 – 2.5GHz 10W GaN Power Amplifier
Product Features
Frequency Range: 0.03 – 2.5GHz PSAT: 40dBm at PIN = 27dBm P1dB: >32dBm PAE: >52% Large Signal Gain: 13dB Small Signal Gain: 19dB IM3 @ 120mA POUT< 33dBm/tone: -30dBc IM5 @ 120mA POUT< 33dBm/tone: -30dBc Bias: VD = 30V, IDQ = 360mA, VG = -2.5V Typical Wideband Flat Power Chip Dimensions: 2.4 x 1.8 x 0.10 mm
Functional Block Diagram
2
J1 RF In
1
J2 RF Out
3
General Description
TriQuint’s TGA2237 is a wideband distributed amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process. The TGA2237 operates from 0.03 – 2.5GHz and provides 10W of saturated output power with 13dB of large signal gain and greater than 52% power-added efficiency.
The broadband performance supports both radar and communication applications across defense and commercial markets as well as electronic warfare. The TGA2237 is fully matched to 50Ω at both RF ports allowing for simple system integration. DC blocks are required on both RF ports and the drain voltage must be injected through an off chip bias-tee on the RF output port.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Pad Configuration
Pad No.
1 2 3
Symbol
RF In VG RF Out, VD
Ordering Information
Part
TGA2237
ECCN
EAR99
Description
0.03 – 2.5GHz 10W GaN Power Amplifier
Preliminary Datasheet: Rev - 02-21-14 © 2014 TriQuint
- 1 of 16 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2237
0.03 – 2.5GHz 10W GaN Power Amplifier
Absolute Maximum Ratings
Parameter
Value
Drain Voltage (VD)
Gate Voltage Range (VG) Drain Current (ID) Gate Current (IG) Power Dissipation (PDISS), 85°C Input Power (PIN), CW, 50Ω, 85°C,
40V -8 to 0V 1350mA -2.4 to 8.4mA
19W
33dBm
Input Power (PIN), CW, VSWR 10:1, VD = 30V, 85°C
30dBm
Channel Temperature (TCH)
Mounting Temperature (30 Seconds)
275°C 320°C
Storage Temperature
-55 to 150°C
Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied.
Recommended Operating Conditions
Parameter
Value
Drain Voltage (VD)
30V
Drain Current (IDQ)
360mA
Drain Current Under RF Drive (ID_Drive)
660mA
Gate Voltage (VG)
-2.5V (Typ.)
Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions.
Electrical Specifications
Test conditions unless otherwise noted: 250C, VD = 30V, IDQ = 360mA, VG = -2.5V Typical
Parameter
Min Typical
Operational Frequency Range
0.03
Small Signal Gain
19
Input Return Loss
> 10
Output Return Loss
> 12
Output Power (Pin = 27dBm)
40
Power Added Efficiency (Pin = 27dBm)
> 52
Power @ 1dB Compression (P1dB)
> 32
IM3 @ 120mA POUT/Tone < 33dBm
-30
IM5 @ 120mA POUT/Tone < 33dBm
-30
Small Signal Gain Temperature Coefficient
-0.02
Output Power Temperature Coefficient
-0.002
Recommended Operating Voltage:
25
30
Max
2.5
32
Units
GHz dB dB dB dBm % dB dBc dBc dB/°C dBm/°C V
Preliminary Datasheet: Rev - 02-21-14 © 2014 TriQuint
- 2 of 16 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2237
0.03 – 2.5GHz 10W GaN Power Amplifier
Thermal and Reliability Information
Parameter
Test Conditions
Value
Thermal Resistance (θJC) (1)
Tbase = 85°C, VD = 30V, IDQ = 360mA
10
Channel Temperature (TCH) (Under RF drive) Tbase = 85°C, VD = 30V, ID_Drive = 633mA, POUT = 175
Median Lifetime (TM)
40dBm, PDISS = 9W
1.3 x 10^7
Units
ºC/W °C Hrs
Notes: 1. Thermal resistance measured to back of carrier plate. MMIC mounted on 40 mils CuMo (80/20) carrier using 1.5 mil AuSn.
Median Lifetime, TM (Hours)
Median Lifetime
Test Conditions: VD = 40 V; Failure Criteria = 10% reduction in ID_MAX
Median Lifetime vs. Channel Temperature
1E+18 1E+17 1E+16 1E+15 1E+14 1E+13 1E+12 1E+11 1E+10 1E+09 1E+08 1E+07 1E+06 1E+05
FET13
1E+04 25 50 75 100 125 150 175 200 225 250 275
Channel Temperature, TCH (C)
Preliminary Datasheet: Rev - 02-21-14 © 2014 TriQuint
- 3 of 16 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2237
0.03 – 2.5GHz 10W GaN Power Amplifier
Typical Performance
The plots reflect performance measured with an external coaxial bias tee and DC blocks (See application circuit on page 10)
S21 (dB) S21 (dB)
Gain vs. Frequency vs. Temperature
27 VD = 30 V, IDQ = 360mA
24
21
18
15
-40C
12 +25C
+85C
9 0 0.5 1 1.5 2 2.5 3 3.5 4 Frequency (GHz)
27 Gain vs. Frequency vs. VD
Temp. = +25°C
IDQ = 360mA
24
21
18
15 25V
28V
12 30V
32V
9 0 0.5 1 1.5 2 2.5 3 3.5 4 Frequency (GHz)
S21 (dB)
27 Gain vs. Frequency vs. ID
Temp. = +25°C
VD = 30V
24
21
18
15
120mA
12 240mA
360mA
9 0 0.5 1 1.5 2 2.5 3 3.5 4
Frequency (GHz)
S11 (dB) S22 (dB)
Input Return Loss vs. Freq. vs. Temp.
0 VD = 30 V, IDQ = 360mA
-5
-10
-15
-20 -40C -25 +25C.