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TGA2237 Dataheets PDF



Part Number TGA2237
Manufacturers TriQuint Semiconductor
Logo TriQuint Semiconductor
Description 10W GaN Power Amplifier
Datasheet TGA2237 DatasheetTGA2237 Datasheet (PDF)

Applications  Commercial and military radar  Communications  Electronic Warfare TGA2237 0.03 – 2.5GHz 10W GaN Power Amplifier Product Features  Frequency Range: 0.03 – 2.5GHz  PSAT: 40dBm at PIN = 27dBm  P1dB: >32dBm  PAE: >52%  Large Signal Gain: 13dB  Small Signal Gain: 19dB  IM3 @ 120mA POUT< 33dBm/tone: -30dBc  IM5 @ 120mA POUT< 33dBm/tone: -30dBc  Bias: VD = 30V, IDQ = 360mA, VG = -2.5V Typical  Wideband Flat Power  Chip Dimensions: 2.4 x 1.8 x 0.10 mm Functional Block Diag.

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Applications  Commercial and military radar  Communications  Electronic Warfare TGA2237 0.03 – 2.5GHz 10W GaN Power Amplifier Product Features  Frequency Range: 0.03 – 2.5GHz  PSAT: 40dBm at PIN = 27dBm  P1dB: >32dBm  PAE: >52%  Large Signal Gain: 13dB  Small Signal Gain: 19dB  IM3 @ 120mA POUT< 33dBm/tone: -30dBc  IM5 @ 120mA POUT< 33dBm/tone: -30dBc  Bias: VD = 30V, IDQ = 360mA, VG = -2.5V Typical  Wideband Flat Power  Chip Dimensions: 2.4 x 1.8 x 0.10 mm Functional Block Diagram 2 J1 RF In 1 J2 RF Out 3 General Description TriQuint’s TGA2237 is a wideband distributed amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process. The TGA2237 operates from 0.03 – 2.5GHz and provides 10W of saturated output power with 13dB of large signal gain and greater than 52% power-added efficiency. The broadband performance supports both radar and communication applications across defense and commercial markets as well as electronic warfare. The TGA2237 is fully matched to 50Ω at both RF ports allowing for simple system integration. DC blocks are required on both RF ports and the drain voltage must be injected through an off chip bias-tee on the RF output port. Lead-free and RoHS compliant. Evaluation boards are available upon request. Pad Configuration Pad No. 1 2 3 Symbol RF In VG RF Out, VD Ordering Information Part TGA2237 ECCN EAR99 Description 0.03 – 2.5GHz 10W GaN Power Amplifier Preliminary Datasheet: Rev - 02-21-14 © 2014 TriQuint - 1 of 16 - Disclaimer: Subject to change without notice www.triquint.com TGA2237 0.03 – 2.5GHz 10W GaN Power Amplifier Absolute Maximum Ratings Parameter Value Drain Voltage (VD) Gate Voltage Range (VG) Drain Current (ID) Gate Current (IG) Power Dissipation (PDISS), 85°C Input Power (PIN), CW, 50Ω, 85°C, 40V -8 to 0V 1350mA -2.4 to 8.4mA 19W 33dBm Input Power (PIN), CW, VSWR 10:1, VD = 30V, 85°C 30dBm Channel Temperature (TCH) Mounting Temperature (30 Seconds) 275°C 320°C Storage Temperature -55 to 150°C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Recommended Operating Conditions Parameter Value Drain Voltage (VD) 30V Drain Current (IDQ) 360mA Drain Current Under RF Drive (ID_Drive) 660mA Gate Voltage (VG) -2.5V (Typ.) Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: 250C, VD = 30V, IDQ = 360mA, VG = -2.5V Typical Parameter Min Typical Operational Frequency Range 0.03 Small Signal Gain 19 Input Return Loss > 10 Output Return Loss > 12 Output Power (Pin = 27dBm) 40 Power Added Efficiency (Pin = 27dBm) > 52 Power @ 1dB Compression (P1dB) > 32 IM3 @ 120mA POUT/Tone < 33dBm -30 IM5 @ 120mA POUT/Tone < 33dBm -30 Small Signal Gain Temperature Coefficient -0.02 Output Power Temperature Coefficient -0.002 Recommended Operating Voltage: 25 30 Max 2.5 32 Units GHz dB dB dB dBm % dB dBc dBc dB/°C dBm/°C V Preliminary Datasheet: Rev - 02-21-14 © 2014 TriQuint - 2 of 16 - Disclaimer: Subject to change without notice www.triquint.com TGA2237 0.03 – 2.5GHz 10W GaN Power Amplifier Thermal and Reliability Information Parameter Test Conditions Value Thermal Resistance (θJC) (1) Tbase = 85°C, VD = 30V, IDQ = 360mA 10 Channel Temperature (TCH) (Under RF drive) Tbase = 85°C, VD = 30V, ID_Drive = 633mA, POUT = 175 Median Lifetime (TM) 40dBm, PDISS = 9W 1.3 x 10^7 Units ºC/W °C Hrs Notes: 1. Thermal resistance measured to back of carrier plate. MMIC mounted on 40 mils CuMo (80/20) carrier using 1.5 mil AuSn. Median Lifetime, TM (Hours) Median Lifetime Test Conditions: VD = 40 V; Failure Criteria = 10% reduction in ID_MAX Median Lifetime vs. Channel Temperature 1E+18 1E+17 1E+16 1E+15 1E+14 1E+13 1E+12 1E+11 1E+10 1E+09 1E+08 1E+07 1E+06 1E+05 FET13 1E+04 25 50 75 100 125 150 175 200 225 250 275 Channel Temperature, TCH (C) Preliminary Datasheet: Rev - 02-21-14 © 2014 TriQuint - 3 of 16 - Disclaimer: Subject to change without notice www.triquint.com TGA2237 0.03 – 2.5GHz 10W GaN Power Amplifier Typical Performance The plots reflect performance measured with an external coaxial bias tee and DC blocks (See application circuit on page 10) S21 (dB) S21 (dB) Gain vs. Frequency vs. Temperature 27 VD = 30 V, IDQ = 360mA 24 21 18 15 -40C 12 +25C +85C 9 0 0.5 1 1.5 2 2.5 3 3.5 4 Frequency (GHz) 27 Gain vs. Frequency vs. VD Temp. = +25°C IDQ = 360mA 24 21 18 15 25V 28V 12 30V 32V 9 0 0.5 1 1.5 2 2.5 3 3.5 4 Frequency (GHz) S21 (dB) 27 Gain vs. Frequency vs. ID Temp. = +25°C VD = 30V 24 21 18 15 120mA 12 240mA 360mA 9 0 0.5 1 1.5 2 2.5 3 3.5 4 Frequency (GHz) S11 (dB) S22 (dB) Input Return Loss vs. Freq. vs. Temp. 0 VD = 30 V, IDQ = 360mA -5 -10 -15 -20 -40C -25 +25C.


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