SD106WS

Small Signal Schottky Diode SD106WS Vishay Semiconductors Features Low turn-on voltage Fast switching This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharge e3 Ideal for precaution of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level application Microminiature plastic package Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Mechanical Data Case: SOD-323 Plastic case Weight: approx. 5.0 mg Packaging Codes/options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part SD106WS Ordering code SD106WS-GS18 or SD106WS-GS08 17431 Type Marking S2 Remarks Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Continuous reverse voltage Forward current Forward surge current Power dissipation tp = 10 ms TC = 25 °C 1) Valid provided that electrodes are kept at ambient temperature. Symbol VR IF IFSM Ptot Value 30 200 1.0 2501) Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Thermal resistance junction to ambient air Test condition Junction temperature Storage temperature range 1) Valid provided that electrodes are kept at ambient temperature. Symbol RthJA Tj Tstg Value 5001) 125 - 65 to + 125 Unit V mA A mW Unit K/W °C °C Document Number 85685 Rev. 1.3, 12-Dec-05 www.vishay.co...