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CESDLC3V0L4 Dataheets PDF



Part Number CESDLC3V0L4
Manufacturers JCET
Logo JCET
Description ESD Protection Diode
Datasheet CESDLC3V0L4 DatasheetCESDLC3V0L4 Datasheet (PDF)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-553 Plastic-Encapsulate Diodes CESDLC3V0L4 Quad-direction ESD Protection Array DESCRIPTION Designed to protect voltage sensitive electronic components from ESD and other SOT-553 transients. Excellent clamping capability, low leakage, low capacitance, and fast response time provide best in class protection on designs that are exposed to ESD. The combination of small size, low capacitance, and high level of ESD protection makes them a f.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-553 Plastic-Encapsulate Diodes CESDLC3V0L4 Quad-direction ESD Protection Array DESCRIPTION Designed to protect voltage sensitive electronic components from ESD and other SOT-553 transients. Excellent clamping capability, low leakage, low capacitance, and fast response time provide best in class protection on designs that are exposed to ESD. The combination of small size, low capacitance, and high level of ESD protection makes them a flexible solution for applications such as HDMI, Display Port TM, and 54 MDDI interfaces. It is designed to replace multiplayer varistors (MLV) in consumer equipments applications such as mobile phone, notebook, PAD, STB, LCD TV etc. FEATURES 12 3  Uni-directional ESD protection of four lines  Low capacitance: 9 pF(Typ)  Low reverse stand−off voltage: 3V  Low reverse clamping voltage  Low leakage current  Excellent package:1.6mm×1.2mm×0.6mm  Fast response time  JESD22-A114-B ESD Rating of class 3B per human body model  IEC 61000-4-2 Level 3 ESD protection APPLICATIONS  Computers and peripherals  Audio and video equipment  Cellular handsets and accessories MARKING  Portable electronics  Other electronics equipments communication systems 5P = Device code Solid dot=Pin1 indicator Front side www.cj-elec.com 1 B,May,2014 CHANGJIANG ELEC.TECH. MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) CESDLC3V0L4 Parameter Symbol Limit IEC 61000-4-2 ESD Voltage JESD22-A114-B ESD Voltage Air Model Contact Model Per Human Body Model VESD(1) ±9 ±8 ±15 ESD Voltage Peak Pulse Power Peak Pulse Current Lead Solder Temperature − Maximum (10 Second Duration) Junction Temperature Machine Model PPP(2) IPP(2) TL Tj ±0.4 20 2.5 260 150 Storage Temperature Range Tstg -55 ~ +150 (1).Device stressed with ten non-repetitive ESD pulses, Per channel(I/O to GND). (2).Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5. Unit kV W A ℃ ℃ ℃ ESD standards compliance IEC61000-4-2 Standard Contact Discharge Level Test Voltage kV 12 24 36 48 Air Discharge Level Test Voltage kV 12 24 38 4 15 JESD22-A114-B Standard ESD Class 0 1A 1B 1C 2 3A 3B Human Body Discharge V 0~249 250~499 500~999 1000~1999 2000~3999 4000~7999 8000~15999 ESD pulse waveform according to IEC61000-4-2 8/20μs pulse waveform according to IEC 61000-4-5 www.cj-elec.com 2 B,May,2014 CHANGJIANG ELEC.TECH. ELECTRICAL PARAMETER CESDLC3V0L4 Symbol VC IPP VBR IT IR VRWM VF IF Parameter Clamping Voltage @ IPP Peak Pulse Current Breakdown Voltage @ IT Test Current Reverse Leakage Current @ VRWM Reverse Standoff Voltage Forward Voltage@ IF Forward Current V-I characteristics for a uni-directional TVS ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Per Diode Reverse stand off voltage VRWM(1) 3 Breakdown voltage V(BR) IT=1mA 5.3 5.9 Reverse leakage current IR VRWM=3V 1.0 Forwa.


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