Document
E 50N06
HEXFET® Power MOSFET
Dynamic dv/dt Rating 175 ْC Operating Temperature Fast switching Ease of Paralleling Simple Drive Requirements
VDSS = 60V ID25 = 50A RDS(ON) = 0.022
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings
Parameter
ID@TC=25 ْC Continuous Drain Current, VGS@10V
ID@TC=100ْC Continuous Drain Current, VGS@10V
IDM Pulsed Drain Current
PD@TC=25ْC Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
EAS Single Pulse Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque,6-32 or M3 screw
Max. 50* 36 200 140 1.0 ±20 100 4.5
55 to +175
300(1.6mm from case) 10 Ibf in(1.1N m)
Pin1–Gate Pin2–Drain Pin3–Source
Units
A
W W/ ْC
V mJ V/ns
ْC
Thermal Resistance
Parameter
Min. Typ. Max.
RθJC
Junction-to-case
1.0
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
RθJA Junction-to-Ambient
62
Units ْC/W
1
E 50N06
HEXFET® Power MOSFET
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage 60
V VGS=0V,ID=250uA
V(BR)DSS/ TJ Breakdown Voltage Temp. Coefficient
0.060
V/ْC Reference to 25ْC,ID=1mA
RDS(on) VGS(th)
gfs
IDSS
Static Drain-to-Source On-resistance Gate Threshold Voltage Forward Transconductance
2.0 17
Drain-to-Source Leakage current
0.022 4.0
25 250
VGS=10V,ID=25A V VDS=VGS, ID=250µA S VDS=25V,ID=25A A VDS=60V,VGS=0V
VDS=48V,VGS=0V,TJ=150ْC
IGSS
Gate-to-Source Forward leakage Gate-to-Source Reverse leakage
100 nA VGS=20V
-100
VGS=-20V
Qg Total Gate Charge Qgs Gate-to-Source charge Qgd Gate-to-Drain ("Miller") charge
67 ID=51A 18 nC VDS=48V 25 VGS=10V See Fig.6 and 13
td(on) tr td(off) tf
Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time
14 VDD=30V
110 45
ID=51A nS RG=9.1Ω
92 RD=0.55Ω See Figure 10
LD Internal Drain Inductance
Between lead, 4.5 6mm(0.25in.)
nH from package
LS Internal Source Inductance
7.5 and center of die contact
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
1900 920 170
VGS=0V pF VDS=25V
f=1.0MHZ See Figure 5
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
IS
Continuous Source Current . (Body Diode)
ISM
Pulsed Source Current (Body Diode)
.
50*
MOSFET symbol
A
showing the integral reverse
200 p-n junction diode.
VSD Diode Forward Voltage
1.3 V TJ=25ْC,IS=25A,VGS=0V
trr Reverse Recovery Time
120 180
nS TJ=25ْC,IF=51A
Qrr Reverse Recovery Charge
0.53 0.80 µC di/dt=100A/µs
ton Forward Turn-on Time
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature(see figure 11)
VDD=25V ,starting TJ=25 ْC ,L=44µH RG=25 IAS=51A(see Figure 12)
ISD 51A,di/dt 250A/ S,VDD V(BR)DSS, TJ 175 ْC Pulse width 300 S; duty cycle 2%.
2
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