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E50N06 Dataheets PDF



Part Number E50N06
Manufacturers ESTEK
Logo ESTEK
Description Power MOSFET
Datasheet E50N06 DatasheetE50N06 Datasheet (PDF)

E 50N06 HEXFET® Power MOSFET Dynamic dv/dt Rating 175 ْC Operating Temperature Fast switching Ease of Paralleling Simple Drive Requirements VDSS = 60V ID25 = 50A RDS(ON) = 0.022 Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to a.

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E 50N06 HEXFET® Power MOSFET Dynamic dv/dt Rating 175 ْC Operating Temperature Fast switching Ease of Paralleling Simple Drive Requirements VDSS = 60V ID25 = 50A RDS(ON) = 0.022 Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter ID@TC=25 ْC Continuous Drain Current, VGS@10V ID@TC=100ْC Continuous Drain Current, VGS@10V IDM Pulsed Drain Current PD@TC=25ْC Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy dv/dt Peak Diode Recovery dv/dt TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque,6-32 or M3 screw Max. 50* 36 200 140 1.0 ±20 100 4.5 55 to +175 300(1.6mm from case) 10 Ibf in(1.1N m) Pin1–Gate Pin2–Drain Pin3–Source Units A W W/ ْC V mJ V/ns ْC Thermal Resistance Parameter Min. Typ. Max. RθJC Junction-to-case 1.0 RθCS Case-to-Sink, Flat, Greased Surface 0.50 RθJA Junction-to-Ambient 62 Units ْC/W 1 E 50N06 HEXFET® Power MOSFET Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 60 V VGS=0V,ID=250uA V(BR)DSS/ TJ Breakdown Voltage Temp. Coefficient 0.060 V/ْC Reference to 25ْC,ID=1mA RDS(on) VGS(th) gfs IDSS Static Drain-to-Source On-resistance Gate Threshold Voltage Forward Transconductance 2.0 17 Drain-to-Source Leakage current 0.022 4.0 25 250 VGS=10V,ID=25A V VDS=VGS, ID=250µA S VDS=25V,ID=25A A VDS=60V,VGS=0V VDS=48V,VGS=0V,TJ=150ْC IGSS Gate-to-Source Forward leakage Gate-to-Source Reverse leakage 100 nA VGS=20V -100 VGS=-20V Qg Total Gate Charge Qgs Gate-to-Source charge Qgd Gate-to-Drain ("Miller") charge 67 ID=51A 18 nC VDS=48V 25 VGS=10V See Fig.6 and 13 td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time 14 VDD=30V 110 45 ID=51A nS RG=9.1Ω 92 RD=0.55Ω See Figure 10 LD Internal Drain Inductance Between lead, 4.5 6mm(0.25in.) nH from package LS Internal Source Inductance 7.5 and center of die contact Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance 1900 920 170 VGS=0V pF VDS=25V f=1.0MHZ See Figure 5 Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions IS Continuous Source Current . (Body Diode) ISM Pulsed Source Current (Body Diode) . 50* MOSFET symbol A showing the integral reverse 200 p-n junction diode. VSD Diode Forward Voltage 1.3 V TJ=25ْC,IS=25A,VGS=0V trr Reverse Recovery Time 120 180 nS TJ=25ْC,IF=51A Qrr Reverse Recovery Charge 0.53 0.80 µC di/dt=100A/µs ton Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Notes: Repetitive rating; pulse width limited by max. junction temperature(see figure 11) VDD=25V ,starting TJ=25 ْC ,L=44µH RG=25 IAS=51A(see Figure 12) ISD 51A,di/dt 250A/ S,VDD V(BR)DSS, TJ 175 ْC Pulse width 300 S; duty cycle 2%. 2 .


AOZ2003 E50N06 MDP9N60


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