Low Noise GaAs MMIC Power Amplifier
7.5 - 12.0 GHz
Noise Figure: 2.7 dB Typical
Gain: 15.5 dB Typical
Single Bias Supply
Low Current Consumption
DC Decoupled RF Input and Output
The MAAM71200-H1 is a wide band, low noise
GaAs MMIC amplifier enclosed in a leadless
ceramic package. The MAAM71200-H1 is a
packaged version of The MAAM71200 low noise
MMIC amplifier chip. The fully monolithic design
operates in 50 Ω without the need for external
The MAAM71200-H1 is ideally suited for microstrip
assemblies where wire or ribbon bonds are used for
interconnects. Typical applications include radar,
EW and communication systems.
The MAAM71200-H1 is fabricated using a mature
0.5-micron gate length GaAs process for increased
reliability and performance repeatability.
1. Case must be electrically connected to RF and DC ground.
2. The RF bond inductance from the transmission line to the
package is assumed to be 0.25 nH. Variations in bond
inductance will result in variations in VSWR and gain slope.
A small capacitive stub may be needed depending on the
inductance realized in the final assembly.
3. Nominal bias is obtained by setting VDD = 4 V.
4. Increasing VDD from 4 volts to 6 volts increases output power
and high frequency bandwidth.
Absolute Maximum Ratings 5,6
-65°C to +150°C
5. Exceeding any one or combination of these limits may cause
permanent damage to this device.
6. M/A-COM Technology does not recommend sustained
operation near these survivability limits.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
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