SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2023
DESCRIPTION www.dat·aWshiethet4Tu.O...
SavantIC Semiconductor
Silicon
NPN Power
Transistors
Product Specification
2SD2023
DESCRIPTION www.dat·aWshiethet4Tu.Oco-m220C package
·Complement to type 2SB1033 ·Low collector saturation voltage
APPLICATIONS ·Low frequency power amplifiers ·Power drivers ·DC-DC converters
PINNING PIN 1 2 3
DESCRIPTION
Base Collector;connected to mounting base Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO VCEO VEBO
Collector-base voltage Collector-emitter voltage Emitter-base voltage
IC Collector current
IB Base current
PC Collector dissipation
Tj Junction temperature Tstg Storage temperature
CONDITIONS Open emitter Open base Open collector
TC=25
VALUE 80 60 6 3 1 40 150
-50~150
UNIT V V V A A W
SavantIC Semiconductor
Silicon
NPN Power
Transistors
Product Specification
2SD2023
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=50µA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=50µA; IC=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A
VBEsat
Base-emitter saturation voltage
IC=2A; IB=0.2A
ICBO Collector cut-off current
VCB=60V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE DC current gain COB Collector output capacitance fT Transition frequency
IC=1A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.5A ; VCE=5V
MIN TYP. MAX UNIT 60 V 80 V 6V
1.0 V 1.5 V 10 µA 10 µA 60 320 70 pF 8 MHz...