C1826

SavantIC Semiconductor Silicon NPN Power Transistors www.DataSheet4U.com DESCRIPTION ·With TO-220 package ·Collector current :IC=4A ·Collector power dissipation :PC=30W@TC=25 APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Product Specification 2SC1826 Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER VCBO VCEO VEBO IC PC Tj Tstg Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 VALUE UNIT 80 V 60 V 6V 4A 30 W 150 -55~150 SavantIC Semiconductor Silicon NPN Power Transistors www.DataSheet4U.com Product Specification 2SC1826 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 60 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 80 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A 1.0 V VBEsat Base-emitter saturation voltage IC=3A ;IB=0.3A 1.5 V ICBO Collector cut-off current VCB=80V;IE=0 100 µA IEBO Emitter cut-off current VEB=6V; IC=0 100 µA hFE DC current gain IC=1A ; VCE=4V 40 320 fT Transition frequency IC=0.5A ; VCE=12V 10 MHz 2 SavantIC Semiconduc...