INCHANGE Semiconductor
isc Silicon NPN Power Transistors
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)...
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistors
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 200V(Min)- BUV28F 225V(Min)- BUV28AF
·High Switching Speed
APPLICATIONS ·Designed for fast switching applications such as high
frequency and efficiency converters, switching
regulators and motor control.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage VBE= 0
BUV28F BUV28AF
400 450
V
VCEO
Collector-Emitter Voltage
BUV28F BUV28AF
200 225
V
VEBO Emitter-Base Voltage
5V
IC Collector Current-Continuous
12 A
ICM Collector Current-Peak
20 A
IB Base Current-Continuous
2A
IBM Base Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
4 18 150 -65~150
A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
7.0 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient 55 ℃/W
isc Product Specification
BUV28F/AF
isc website:www.iscsemi.cn
1
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistors
isc Product Specification
BUV28F/AF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BUV28F BUV28AF
IC= 0.2A ;IB= 0; L= 25mH
200 225
V
VCE(sat)
Collector-Emitter Saturation Voltage
BUV28F IC= 6A; IB= 0.6A BUV28AF IC= 4A; IB= 0.4A
1.5 V
1.5
VBE(sat)
Base-Emitter Saturation Voltag...