BUV28AF

INCHANGE Semiconductor isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min)- BUV28F 225V(Min)- BUV28AF ·High Switching Speed APPLICATIONS ·Designed for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 BUV28F BUV28AF 400 450 V VCEO Collector-Emitter Voltage BUV28F BUV28AF 200 225 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 20 A IB Base Current-Continuous 2A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 4 18 150 -65~150 A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 7.0 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 55 ℃/W isc Product Specification BUV28F/AF isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification BUV28F/AF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage BUV28F BUV28AF IC= 0.2A ;IB= 0; L= 25mH 200 225 V VCE(sat) Collector-Emitter Saturation Voltage BUV28F IC= 6A; IB= 0.6A BUV28AF IC= 4A; IB= 0.4A 1.5 V 1.5 VBE(sat) Base-Emitter Saturation Voltag...