BUV18

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUV18 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.6V(Max.) @IC= 40A ·High Switching Speed APPLICATIONS ·High efficiency converters ·Motor drive control ·Switching regulator Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 120 V 60 V 7V 50 A 90 A 16 A 40 A 250 W 200 ℃ -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.7 ℃/W isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUV18 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 40A; IB= 4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 80A; IB= 8A VBE(sat) Base-Emitter Saturation Voltage ICEX Collector Cutoff Current IEBO Emitter Cutoff Current IC= 80A; IB= 8A VCE= 120V;VBE= -1.5V VCE= 120V;VBE= -1.5V;TC=100℃ VEB= 5V; IC= 0 0.6 V ...