STN4920S8RG

STN4920 Dual N Channel Enhancement Mode MOSFET 7.2A DESCRIPTION STN4920 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system. PIN CONFIGURATION SOP-8 FEATURE z 30V/7.2A, RDS(ON) = 28mΩ@VGS = 10V z 30V/6.0A, RDS(ON) = 36mΩ@VGS = 4.5V z Super high density cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability z SOP-8 package design PART MARKING SOP-8 ORDERING INFORMATION Part Number Package Part Marking STN4920S8RG SOP-8 STN4920 STN4920S8TG SOP-8 STN4920 ※ Process Code : A ~ Z ; a ~ z ※ STN4920S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free ※ STN4920S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4920 2007. V1 STN4920 Dual N Channel Enhancement Mode MOSFET 7.2A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature VGSS ID IDM IS PD TJ Storgae Temperature Range TSTG Thermal Resistance-Junction to Ambient RθJA Typical 30 ±20 7.2 6.0 20 1.7 2.8 1.8 -55/150 -55/...