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STN4828 Dataheets PDF



Part Number STN4828
Manufacturers Stanson Technology
Logo Stanson Technology
Description MOSFET
Datasheet STN4828 DatasheetSTN4828 Datasheet (PDF)

STN4828 Dual N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION The STN4828 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . PIN CONFIGURATION SOP-8 FEATURE.

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STN4828 Dual N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION The STN4828 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . PIN CONFIGURATION SOP-8 FEATURE 60V/10.0A, RDS(ON) = 30mΩ (Typ.) @VGS = 10V 60V/6.0A, RDS(ON) = 35mΩ @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design MARKING Y: Year Code A: Porduce Code P: Process Code 1 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4828 2008. V1 STN4828 Dual N Channel Enhancement Mode MOSFET 10.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature VGSS ID IDM IS PD TJ Storgae Temperature Range TSTG Thermal Resistance-Junction to Ambient RθJA Typical 60 ±20 10.0 6.0 30 10 2.5 1.6 -55/150 -55/150 80 Unit V V A A A W ℃ ℃ ℃/W 2 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4828 2008. V1 STN4828 Dual N Channel Enhancement Mode MOSFET 10.0A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250 uA Gate Leakage Current Zero Gate Voltage Drain Current IGSS IDSS TJ=55℃ VDS=0V,VGS=±20V VDS=48V,VGS=0V VDS=48V,VGS=0V On-State Drain Current ID(on) Drain-source On-Resistance RDS(on) Forward Tran Conductance gfs VDS≦5V,VGS=4.5V VGS=10V, ID=10A VGS=4.5V, ID=6A VDS=5.0V,ID=5.3A Diode Forward Voltage VSD IS=1.7A,VGS=0V Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse TransferCapacitance Qg Qgs Qgd Ciss Coss Crss VDS=30V,VGS=5V ID≡5.3A VDS=30V,VGS=0V f=1MHz Turn-On Time Turn-Off Time td(on) tr td(off) tf VDD=30V,RL=6.8Ω ID=4.4A,VGEN=10V RG=1Ω 60 V 0.8 2.5 V ±100 1 5 nA uA 25 A 0.030 0.038 Ω 0.035 0.045 24 S 0.8 1.0 V 10 3.5 nC 3.6 890 84 pF 49 10 14 15 20 nS 25 35 10 15 3 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4828 2008. V1 STN4828 Dual N Channel Enhancement Mode MOSFET 10.0A TYPICAL CHARACTERICTICS (25℃ Unless Note) 4 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4828 2008. V1 STN4828 Dual N Channel Enhancement Mode MOSFET 10.0A 5 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4828 2008. V1 SOP-8 PACKAGE OUTLINE STN4828 Dual N Channel Enhancement Mode MOSFET 10.0A 6 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4828 2008. V1 .


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