DatasheetsPDF.com

STN4426 Dataheets PDF



Part Number STN4426
Manufacturers Stanson Technology
Logo Stanson Technology
Description MOSFET
Datasheet STN4426 DatasheetSTN4426 Datasheet (PDF)

STN4426 N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching. PIN CONFIGURATION SOP-8 FEATURE � 20V/8.0A, RD.

  STN4426   STN4426


Document
STN4426 N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching. PIN CONFIGURATION SOP-8 FEATURE � 20V/8.0A, RDS(ON) = 28mΩ (Typ.) @VGS = 4.5V � 20V/7.0A, RDS(ON) = 36mΩ @VGS = 2.5V � 20V/3.0A, RDS(ON) = 42mΩ @VGS = 1.8V � Super high density cell design for extremely low RDS(ON) � Exceptional on-resistance and maximum DC current capability � SOP-8 package design PART MARKING SOP-8 STN4426 SYA S: Subcontractor Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4426 2009. V1 STN4426 N Channel Enhancement Mode MOSFET 8.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current VGSS ID IDM Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature IS PD TJ Storgae Temperature Range TSTG Thermal Resistance-Junction to Ambient RθJA Typical 20 ±12 7.4 6.0 35 2.3 2.5 1.6 -55/150 -55/150 80 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4426 2009. V1 STN4426 N Channel Enhancement Mode MOSFET 8.0A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current V(BR)DSS VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current Drain-source OnResistance Forward Transconductance Diode Forward Voltage ID(on) RDS(on) gfs VSD VGS=0V,ID=250uA VDS=VGS,ID=250uA VDS=0V,VGS=±12V VDS=20V,VGS=0V VDS=20V,VGS=0V TJ=85℃ VDS≧5V,VGS=10V VGS=4.5V,ID=8.0A VGS=2.5V,ID=7.0A VGS=1.8V,ID=3.0A VDS=15V,ID=5.0AV IS=1.0A,VGS=0V 20 0.4 6 Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse TransferCapacitance Turn-On Time Turn-Off Time Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VDS=10V,VGS=4.5V ID≡5.0A VDS ==10V,VGS=0V f=1MHz VDD=10V,RL=10Ω ID=1A,VGEN=4.5V RG=6Ω V 1.0 V ±100 1 nA 10 uA A 22 28 26 38 mΩ 32 42 30 S 0.8 1.2 V 10 13 1.4 nC 2.1 600 120 pF 100 15 25 40 60 nS 45 65 30 40 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4426 2009. V1 TYPICAL CHARACTERICTICS STN4426 N Channel Enhancement Mode MOSFET 8.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4426 2009. V1 TYPICAL CHARACTERICTICS STN4426 N Channel Enhancement Mode MOSFET 8.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4426 2009. V1 PACKAGE OUTLINE SOP-8P STN4426 N Channel Enhancement Mode MOSFET 8.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4426 2009. V1 .


STN4416 STN4426 STN4440


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)