Document
STN4426
N Channel Enhancement Mode MOSFET
8.0A
DESCRIPTION
STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching.
PIN CONFIGURATION SOP-8
FEATURE
� 20V/8.0A, RDS(ON) = 28mΩ (Typ.) @VGS = 4.5V
� 20V/7.0A, RDS(ON) = 36mΩ @VGS = 2.5V
� 20V/3.0A, RDS(ON) = 42mΩ @VGS = 1.8V
� Super high density cell design for extremely low RDS(ON)
� Exceptional on-resistance and maximum DC current capability
� SOP-8 package design
PART MARKING SOP-8
STN4426 SYA
S: Subcontractor Y: Year Code A: Process Code
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4426 2009. V1
STN4426
N Channel Enhancement Mode MOSFET
8.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
TA=25℃ TA=70℃
Pulsed Drain Current
VGSS ID
IDM
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operation Junction Temperature
IS PD TJ
Storgae Temperature Range
TSTG
Thermal Resistance-Junction to Ambient
RθJA
Typical
20
±12 7.4 6.0 35
2.3 2.5 1.6 -55/150
-55/150
80
Unit V V A A A W ℃ ℃
℃/W
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4426 2009. V1
STN4426
N Channel Enhancement Mode MOSFET
8.0A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage Gate Threshold Voltage
Gate Leakage Current
V(BR)DSS VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
Drain-source OnResistance
Forward Transconductance
Diode Forward Voltage
ID(on) RDS(on)
gfs VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±12V VDS=20V,VGS=0V VDS=20V,VGS=0V
TJ=85℃
VDS≧5V,VGS=10V VGS=4.5V,ID=8.0A VGS=2.5V,ID=7.0A VGS=1.8V,ID=3.0A VDS=15V,ID=5.0AV
IS=1.0A,VGS=0V
20 0.4
6
Dynamic
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse TransferCapacitance
Turn-On Time
Turn-Off Time
Qg Qgs Qgd Ciss Coss
Crss
td(on) tr
td(off) tf
VDS=10V,VGS=4.5V ID≡5.0A
VDS ==10V,VGS=0V f=1MHz
VDD=10V,RL=10Ω ID=1A,VGEN=4.5V
RG=6Ω
V
1.0 V
±100 1
nA
10 uA
A
22 28 26 38 mΩ 32 42
30 S
0.8 1.2 V
10 13 1.4 nC 2.1
600
120 pF
100
15 25 40 60 nS 45 65 30 40
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4426 2009. V1
TYPICAL CHARACTERICTICS
STN4426
N Channel Enhancement Mode MOSFET
8.0A
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4426 2009. V1
TYPICAL CHARACTERICTICS
STN4426
N Channel Enhancement Mode MOSFET
8.0A
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4426 2009. V1
PACKAGE OUTLINE SOP-8P
STN4426
N Channel Enhancement Mode MOSFET
8.0A
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4426 2009. V1
.