Document
SCRIPTION
STP6621
P Channel Enhancement Mode MOSFET
-18.0A
STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management ane ther battery powered circuits where high-side witching.
PIN CONFIGURATION SOP-8
FEATURE
-60V/-10.0A, RDS(ON) = 23mΩ (Typ.) @VGS =-10V
-60V/-8.0A, RDS(ON) = 28mΩ @VGS = -4.5V
Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design
PART MARKING SOP-8
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
.
STP6621 2010. V1
STP6621
P Channel Enhancement Mode MOSFET
-18.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
TA=25℃ TA=70℃
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operation Junction Temperature
VDSS VGSS
ID IDM IS PD TJ
Storgae Temperature Range Thermal Resistance-Junction to Ambient
TSTG RθJA
Typical
-60
±20 -18.0 -11.0
-50
-4.3 3.1 2.0 -55/150
-55/150
70
Unit V V A A A W ℃ ℃ ℃/W
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
.
STP6621 2010. V1
STP6621
P Channel Enhancement Mode MOSFET
-18.0A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS VGS=0V,ID=-250uA -60 VGS(th) VDS=VGS,ID=-250 uA -0.8
V -2.5 V
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current Drain-source On-Resistance Forward Tran Conductance
IGSS IDSS
ID(on) RDS(on)
gfs
VDS=0V,VGS=±20V
VDS=-48V,VGS=0V VDS=-48V,VGS=0V
TJ=85℃
VDS=-5V,VGS=10V
VGS=-10V, ID=-10A VGS=-4.5V, ID=-8A VDS=-5V,ID=-6.7A
±100 nA -1 -10 uA
-18 A 0.023 0.030 Ω 0.028 0.038 18 S
Diode Forward Voltage
VSD IS=-2.3A,VGS=0V
-0.7 -1.0 V
Dynamic
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance
Output Capacitance
Reverse TransferCapacitance
Qg Qgs Qgd Ciss Coss Crss
VDS=-30V,VGS=-10 ID≡-6.2A
VDS =-30V,VGS=0V f=1MHz
47 55 9.2 9.3 2410 179 125
nC pF
Turn-On Time Turn-Off Time
td(on)
tr
td(off)
tf
VDS=-30V,RL=4.7Ω VGS=-10V,RGEN=3Ω
9.8 6.1 44 12.9
nS
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
.
STP6621 2010. V1
TYPICAL CHARACTERICTICS
STP6621
P Channel Enhancement Mode MOSFET
-18.0A
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
.
STP6621 2010. V1
TYPICAL CHARACTERICTICS
STP6621
P Channel Enhancement Mode MOSFET
-18.0A
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
.
STP6621 2010. V1
SOP-8 PACKAGE OUTLINE
STP6621
P Channel Enhancement Mode MOSFET
-18.0A
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
.
STP6621 2010. V1
.