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STP6621 Dataheets PDF



Part Number STP6621
Manufacturers Stanson Technology
Logo Stanson Technology
Description MOSFET
Datasheet STP6621 DatasheetSTP6621 Datasheet (PDF)

SCRIPTION STP6621 P Channel Enhancement Mode MOSFET -18.0A STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management ane ther battery powered circuits where high-side witching. PIN CONFIGURATION SOP-8 FEATURE -60V/-10.0A, RDS(ON) = 23m.

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SCRIPTION STP6621 P Channel Enhancement Mode MOSFET -18.0A STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management ane ther battery powered circuits where high-side witching. PIN CONFIGURATION SOP-8 FEATURE -60V/-10.0A, RDS(ON) = 23mΩ (Typ.) @VGS =-10V -60V/-8.0A, RDS(ON) = 28mΩ @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING SOP-8 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com . STP6621 2010. V1 STP6621 P Channel Enhancement Mode MOSFET -18.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature VDSS VGSS ID IDM IS PD TJ Storgae Temperature Range Thermal Resistance-Junction to Ambient TSTG RθJA Typical -60 ±20 -18.0 -11.0 -50 -4.3 3.1 2.0 -55/150 -55/150 70 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com . STP6621 2010. V1 STP6621 P Channel Enhancement Mode MOSFET -18.0A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=-250uA -60 VGS(th) VDS=VGS,ID=-250 uA -0.8 V -2.5 V Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-source On-Resistance Forward Tran Conductance IGSS IDSS ID(on) RDS(on) gfs VDS=0V,VGS=±20V VDS=-48V,VGS=0V VDS=-48V,VGS=0V TJ=85℃ VDS=-5V,VGS=10V VGS=-10V, ID=-10A VGS=-4.5V, ID=-8A VDS=-5V,ID=-6.7A ±100 nA -1 -10 uA -18 A 0.023 0.030 Ω 0.028 0.038 18 S Diode Forward Voltage VSD IS=-2.3A,VGS=0V -0.7 -1.0 V Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse TransferCapacitance Qg Qgs Qgd Ciss Coss Crss VDS=-30V,VGS=-10 ID≡-6.2A VDS =-30V,VGS=0V f=1MHz 47 55 9.2 9.3 2410 179 125 nC pF Turn-On Time Turn-Off Time td(on) tr td(off) tf VDS=-30V,RL=4.7Ω VGS=-10V,RGEN=3Ω 9.8 6.1 44 12.9 nS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com . STP6621 2010. V1 TYPICAL CHARACTERICTICS STP6621 P Channel Enhancement Mode MOSFET -18.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com . STP6621 2010. V1 TYPICAL CHARACTERICTICS STP6621 P Channel Enhancement Mode MOSFET -18.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com . STP6621 2010. V1 SOP-8 PACKAGE OUTLINE STP6621 P Channel Enhancement Mode MOSFET -18.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com . STP6621 2010. V1 .


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