S T P /B 3055L2
S amHop Microelectronics C orp.
Nov 23, 2004
N-C hannel Logic Level E nhancement Mode Field E ffect T...
S T P /B 3055L2
S amHop Microelectronics C orp.
Nov 23, 2004
N-C hannel Logic Level E nhancement Mode Field E ffect
Transistor
P R ODUC T S UMMAR Y
VDS S 20V
ID R DS (ON) ( m W ) Max
40 @ VGS = 4.5V 18A
60 @ VGS = 2.5V
F E AT UR E S S uper high dense cell design for low R DS(ON).
R ugged and reliable. TO-220 and TO-263 P ackage.
D D
GS S TB S E R IE S T O -263(DD-P AK )
G D S
S TP S E R IE S TO-220
G S
ABS OLUTE MAXIMUM R ATINGS (TC=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage
Drain C urrent-C ontinuous @ TJ=25 C -P ulsed a
Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Operating and S torage Temperature R ange
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient
S ymbol VDS VGS ID IDM IS PD TJ, TSTG
R JC R JA
Limit 20 12 18 45 15 50
-55 to 175
3 50
Unit V V A A A W C
C /W C /W
1
S T P /B 3055L2
E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted)
P a ra meter
S ymbol Condition
OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current Gate-Body Leakage
ON CHARACTERISTICS b
Gate Threshold Voltage
BVDSS VGS =0V, ID =250uA IDSS VDS =16V, VGS =0V IGSS VGS = 12V, VDS = 0V
VGS(th) VDS =VGS, ID = 250uA
Drain-S ource On-S tate R esistance
R DS(ON)
VGS =4.5V, ID= 6.0A VGS =2.5V, ID= 5.2A
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS c
ID(ON) gFS
VDS = 5V, VGS = 4.5V VDS...