Document
STN8882D
N Channel Enhancement Mode MOSFET
60.0A
DESCRIPTION
STN8882D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN8882D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
PIN CONFIGURATION (D-PAK)
TO-252
TO-251
FEATURE
� 30V/ 35A, RDS(ON) = 5mΩ � @VGS = 10V � 30V/35A, RDS(ON) = 7mΩ
@VGS = 4.5V � Super high density cell design for
extremely low RDS(ON) � Exceptional on-resistance and
maximum DC current capability � TO-252,TO-251 package design
PART MARKING
Y: Year Code A: Process Code
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2009, Stanson Corp.
STN8882D 2009. V1
STN8882D
N Channel Enhancement Mode MOSFET
60.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
TA=25℃ TA=70℃
Pulsed Drain Current
VGSS ID
IDM
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operation Junction Temperature
IS PD TJ
Storgae Temperature Range
TSTG
Thermal Resistance-Junction to Ambient
RθJA
Typical
30
±20 60 40 100
50 40 55 150
-55/150
100
Unit V V A A A W ℃ ℃
℃/W
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2009, Stanson Corp.
STN8882D 2009. V1
STN8882D
N Channel Enhancement Mode MOSFET
60.0A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static Drain-Source Breakdown Voltage Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
V(BR)DSS VGS=0V,ID=250mA 30
VGS(th) VDS=VGS,ID=250uA 1.0
IGSS IDSS ID(on)
VDS=0V,VGS=±20V
VDS=30V,VGS=0V VDS=30V,VGS=0V
TJ=120℃
VDS≧5V,VGS=10V
100
V
3.0 V
±100 1 5
nA uA
A
Drain-source OnResistance
RDS(on)
VGS=10V,ID=35A VGS=4.5V,ID=35A
5 7
mΩ
Forward Transconductance Diode Forward Voltage
Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse TransferCapacitance
Turn-On Time
Turn-Off Time
gfs VSD
Qg Qgs Qgd Ciss Coss Crss
td(on) tr
td(off) tf
VDS=5V,ID=12A IS=1.0A,VGS=0V
VDS=15V,VGS=4.5V ID≡20A
VDS =15V,VGS=0V F=1MHz
VDD=15V,RL= 15Ω ID=1.0A,VGEN=10V
RG=6Ω
110 1.5
S V
41.3 54
18 23 nC 13 17
4826
683.3 374.9
pF
23.6 47
12 24 nS 114 227 97.2 195
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2009, Stanson Corp.
STN8882D 2009. V1
TYPICAL CHARACTERICTICS
STN8882D
N Channel Enhancement Mode MOSFET
60.0A
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2009, Stanson Corp.
STN8882D 2009. V1
TYPICAL CHARACTERICTIC.