ICE7N60

Preliminary Data Sheet ICE7N60 ICE7N60 N-Channel Enhancement Mode MOSFET Features Low rDS(on) Ultra Low Gate Charge High dv/dt capability High Unclamped Inductive Switching (UIS) capability High peak current capability Increased transconductance performance Optimized design for high performance power systems HALOGEN FREE ID V(BR)DSS rDS(on) Qg Product Summary TA=25oC ID=250uA VGS=10V VDS=480V 7A 600V 0.52Ω 21nC D Max Min Typ Typ G S T0220 ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE. Standard Metal Heatsink 1=Gate, 2=Drain, 3=Source. Maximum ratings b , at Tj=25°C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current Avalanche energy, single pulse Avalanche current, repetitive MOSFET dv/dt ruggedness Gate source voltage ID ID, pulse E AS I AR dv/dt VGS Tc=25°C Tc=25°C ID=3.5A limited by Tjmax VDS=480V, ID=7A, Tj=125°C static AC (f>1Hz) Power dissipation Operating and storage temperature Mounting torque Ptot Tj, Tstg Tc=25°C M 3 & 3.5 screws a When mounted on 1inch square 2oz copper clad FR-4 b Preliminary Data Sheet – Specifications subject to change Value 7 21 170 3.5 50 ±20 ±30 65 -55 to +150 60 Unit A A mJ A V/ns V W °C Ncm SP-7N60-000-3 05/15/2013 1 Preliminary Data Sheet ICE7N60 P...