ICE7N60FP

ICE7N60FP ICE7N60FP N-Channel Enhancement Mode MOSFET Features Low rDS(on) Ultra Low Gate Charge High dv/dt capability High Unclamped Inductive Switching (UIS) capability High peak current capability Increased transconductance performance Optimized design for high performance power systems HALOGEN FREE ID V(BR)DSS rDS(on) Qg Product Summary TA=25oC 7A ID=250uA 600V VGS=10V VDS=480V 0.57Ω 23nC D G S Max Min Typ Typ ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE. T0220 Full-PAK Isolated (T0-220) Maximum ratings at Tj=25°C, unless otherwise specified Parameter Symbol Conditions Continuous drain current a Pulsed drain current a Avalanche energy, single pulse ID ID, pulse E AS Tc=25°C Tc=100°C Tc=25°C ID=3.5A Avalanche current, repetitiv...