ICE60N130FP
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems
Product Summary
ID V(BR)DSS rDS(ON)
Qg
TA = 25°C ID = 250uA VGS = 10V VDS = 480V
23A 650V 0.13Ω 82nC
Pin Description:
TO-220
G
Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified
Symbol Parameter
Value
Unit Conditions
ID ID, pulse
EAS IAR dv/dt
Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness
VGS
Ptot Tj, Tstg
Gate Source Voltage
Power Dissipation Operating and Storage Temperature Mounting Torque
23 82 690 11.5 50
±20 ±30
35
-55 to +150 50
A A mJ A V/ns
V
W °C Ncm
TC = 25°C TC = 25°C ID = 11.5A Limited by Tjmax VDS = 480V, ID = 23A, Tj = 125°C Static AC (f>Hz) TC = 25°C
M 2.5 screws
Max Min Typ Typ
D
S
Symbol Parameter
Values Min Typ Max
Unit Conditions
Thermal Characteristics
RthJC Thermal Resistance, Junction to Case RthJA Thermal Resistance, Junction to Ambient Tsold Soldering Temperature, Wave Soldering Only
Allowed At Leads
- - 2.5 - - 72 - - 260
Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified
Static Characteristics
V(BR)DSS VGS(th) IDSS
Drain to Source Breakdown Voltage Gate Threshold Voltage
Zero Gate Voltage Drain Current
600 650 2.5 3 3.5 - 0.1 1 - - 100
IGSS RDS(on)
Gate Source Leakage Current Drain to Source On-State Resistance
- - 100 - 0.13 0.15 - 0.4 -
RGS Gate Resistance
-4-
°C/W °C
Leaded 1.6mm (0.063in.) from Case for 10s
V VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA
µA VDS = 600V, VGS = 0V, Tj = 25°C VDS = 600V, VGS = 0V, Tj = 150°C
nA VGS = ±20v, VDS = 0V Ω VGS = 10V, ID = 11.5A, Tj = 25°C
VGS = 10V, ID = 11.5A, Tj = 150°C Ω f = 1 MHz, open drain
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email:
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ICE60N130FP
Symbol Parameter
Dynamic Characteristics
Ciss Coss Crss Coss gfs td(on) Tr td(off ) tf
Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Transconductance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
Gate Charge Characteristics
Qgs Qgd Qg Vplateau
Gate to Source Charge Gate to Drain Charge Gate Charge Total Gate Plateau Voltage
Reverse Diode
VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Irm Peak Reverse Recovery Current
Values Min Typ Max
Unit Conditions
- 2650 - 943 -8- 80 - 23 - 10 -5- 67 - 4.5 -
pF VGS = 0V, VDS = 25V, f = 1 MHz
VGS = 0V, VDS = 100V, f = 1 MHz S VDS = >2*ID* RDS, ID = 11.5A
nS
VDS = 380V, VGS = 10V, ID = 23A, RG = 4Ω (External)
- 16 - 30 - 82 - 5.5 -
nC VDS = 480V, ID = 23A, VGS = 0 to 10V
V
- 1.0 1.2 - 423 -8- 34 -
V VGS = 0V, IS = IF ns
µC VRR = 480V, IS = IF, diF/dt = 100 A/µS A
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email:
[email protected] 2
ICE60N130FP
ID - Drain Current (A) ID - Drain Current (A)
80 70 60 50 40 30 20 10 0
0
Output Characteristics
Transfer Characterstics
VGS = 10V to 7V
80 70
60 6V 50
40
30 5V 20
10
TJ = 150°C
25°C
0
5
10 15
0 2 4 6 8 10
VDS - Drain to Source Voltage (V)
VGS - Gate to Source Voltage (V)
RDS(on) - On State Resistance (mΩ) VGS - Gate to Source Voltage (V)
RDS(on) - On State Resistance (Normalized)
On State Resistance vs Drain Current 500
400
300 VGS = 10V
200
On Resistance vs Junction Temperature
4.0
3.5
3.0
VGS = 10V ID = 11.5A
2.5
2.0
1.5
1.0 100
0.5
0 0 10 20 30 40 50 60 70 80 ID - Drain Current (A)
0.0 -50 -25
0 25 50 75 100 125 150 TJ - Junction Temperature (°C)
10 9 8 7 6 5
4
3
2 1 0
0
Gate Charge VDS = 480V
ID = 23A
20 40
60
Qg - Total Gate Charge (nC)
80
100
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email:
[email protected] 3
ICE60N130FP
VGS(th) - Gate Threshold Voltage (Normalized)
V(BR)DSS - Drain to Source Breakdown Voltage (Normalized)
1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4
-50
Gate Threshold Voltage vs. Junction Temperature ID = 250µA
-25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C)
C - Capacitance (pF)
10000 1000 100
Capacitance Ciss
Coss
10
0 0
Crss
100 200 300 400 500 VDS- Drain to Source Voltage (V)
600
Drain to Source Breakdown Voltage vs. Junction Temperature 1.2
1.1 ID = 1mA
1.0
0.9
ID - Drain Current (A)
Maximum Rate Forward Biased Safe Operating Area
100
Single Pulse
Tc = 25°C
T = 150°C
10 VGS = 10V
10us
1 0.1 RPaDSck(OaNg) LeimLimit it
Thermal Limit
100us
1ms 10ms
DC
0.8 -50 -25
0 25 50 75 100 125 150 TJ - Junction Temperature (°C)
0.01 1
10 100 VDS- Drain to Source Voltage (V)
1.00 0.5 0.2 0.1
0.10 0.05 0.02
Transient Thermal Response - Junction to Case
1.