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ICE60N130FP Dataheets PDF



Part Number ICE60N130FP
Manufacturers Micross Components
Logo Micross Components
Description N-Channel MOSFET
Datasheet ICE60N130FP DatasheetICE60N130FP Datasheet (PDF)

ICE60N130FP N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Product Summary ID V(BR)DSS rDS(ON) Qg TA = 25°C ID = 250uA VGS = 10V VDS = 480V 23A 650V 0.13Ω 82nC Pin Description: TO-220 G Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Symbol Para.

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ICE60N130FP N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Product Summary ID V(BR)DSS rDS(ON) Qg TA = 25°C ID = 250uA VGS = 10V VDS = 480V 23A 650V 0.13Ω 82nC Pin Description: TO-220 G Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Source Voltage Power Dissipation Operating and Storage Temperature Mounting Torque 23 82 690 11.5 50 ±20 ±30 35 -55 to +150 50 A A mJ A V/ns V W °C Ncm TC = 25°C TC = 25°C ID = 11.5A Limited by Tjmax VDS = 480V, ID = 23A, Tj = 125°C Static AC (f>Hz) TC = 25°C M 2.5 screws Max Min Typ Typ D S Symbol Parameter Values Min Typ Max Unit Conditions Thermal Characteristics RthJC Thermal Resistance, Junction to Case RthJA Thermal Resistance, Junction to Ambient Tsold Soldering Temperature, Wave Soldering Only Allowed At Leads - - 2.5 - - 72 - - 260 Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified Static Characteristics V(BR)DSS VGS(th) IDSS Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current 600 650 2.5 3 3.5 - 0.1 1 - - 100 IGSS RDS(on) Gate Source Leakage Current Drain to Source On-State Resistance - - 100 - 0.13 0.15 - 0.4 - RGS Gate Resistance -4- °C/W °C Leaded 1.6mm (0.063in.) from Case for 10s V VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA µA VDS = 600V, VGS = 0V, Tj = 25°C VDS = 600V, VGS = 0V, Tj = 150°C nA VGS = ±20v, VDS = 0V Ω VGS = 10V, ID = 11.5A, Tj = 25°C VGS = 10V, ID = 11.5A, Tj = 150°C Ω f = 1 MHz, open drain Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected] 1 ICE60N130FP Symbol Parameter Dynamic Characteristics Ciss Coss Crss Coss gfs td(on) Tr td(off ) tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Transconductance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Gate Charge Characteristics Qgs Qgd Qg Vplateau Gate to Source Charge Gate to Drain Charge Gate Charge Total Gate Plateau Voltage Reverse Diode VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Irm Peak Reverse Recovery Current Values Min Typ Max Unit Conditions - 2650 - 943 -8- 80 - 23 - 10 -5- 67 - 4.5 - pF VGS = 0V, VDS = 25V, f = 1 MHz VGS = 0V, VDS = 100V, f = 1 MHz S VDS = >2*ID* RDS, ID = 11.5A nS VDS = 380V, VGS = 10V, ID = 23A, RG = 4Ω (External) - 16 - 30 - 82 - 5.5 - nC VDS = 480V, ID = 23A, VGS = 0 to 10V V - 1.0 1.2 - 423 -8- 34 - V VGS = 0V, IS = IF ns µC VRR = 480V, IS = IF, diF/dt = 100 A/µS A Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected] 2 ICE60N130FP ID - Drain Current (A) ID - Drain Current (A) 80 70 60 50 40 30 20 10 0 0 Output Characteristics Transfer Characterstics VGS = 10V to 7V 80 70 60 6V 50 40 30 5V 20 10 TJ = 150°C 25°C 0 5 10 15 0 2 4 6 8 10 VDS - Drain to Source Voltage (V) VGS - Gate to Source Voltage (V) RDS(on) - On State Resistance (mΩ) VGS - Gate to Source Voltage (V) RDS(on) - On State Resistance (Normalized) On State Resistance vs Drain Current 500 400 300 VGS = 10V 200 On Resistance vs Junction Temperature 4.0 3.5 3.0 VGS = 10V ID = 11.5A 2.5 2.0 1.5 1.0 100 0.5 0 0 10 20 30 40 50 60 70 80 ID - Drain Current (A) 0.0 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) 10 9 8 7 6 5 4 3 2 1 0 0 Gate Charge VDS = 480V ID = 23A 20 40 60 Qg - Total Gate Charge (nC) 80 100 Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected] 3 ICE60N130FP VGS(th) - Gate Threshold Voltage (Normalized) V(BR)DSS - Drain to Source Breakdown Voltage (Normalized) 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 -50 Gate Threshold Voltage vs. Junction Temperature ID = 250µA -25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) C - Capacitance (pF) 10000 1000 100 Capacitance Ciss Coss 10 0 0 Crss 100 200 300 400 500 VDS- Drain to Source Voltage (V) 600 Drain to Source Breakdown Voltage vs. Junction Temperature 1.2 1.1 ID = 1mA 1.0 0.9 ID - Drain Current (A) Maximum Rate Forward Biased Safe Operating Area 100 Single Pulse Tc = 25°C T = 150°C 10 VGS = 10V 10us 1 0.1 RPaDSck(OaNg) LeimLimit it Thermal Limit 100us 1ms 10ms DC 0.8 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) 0.01 1 10 100 VDS- Drain to Source Voltage (V) 1.00 0.5 0.2 0.1 0.10 0.05 0.02 Transient Thermal Response - Junction to Case 1.


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