ICE47N60W

ICE47N60W N-Channel Enhancement Mode MOSFET Features: TO247 Package r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Product Summary ID V(BR)DSS rDS(ON) Qg TA = 25°C ID = 250uA VGS = 10V VDS = 480V 47A 600V 0.063Ω 187nC Pin Description: TO-247 G Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Source Voltage Power Dissipation Operating and Storage Temperature Mounting Torque 47 117 1600 24 50 ±20 ±30 417 -55 to +150 60 A A mJ A V/ns V W °C Ncm TC = 25°C TC = 25°C ID = 24A Limited by Tjmax VDS = 480V, ID = 47A, Tj = 125°C Static AC (f>Hz) TC = 25°C M 3 & 3.5 screws Max Min Typ Typ D S Symbol Parameter Values Min Typ Max Unit Conditions Thermal Characteristics RthJC Thermal Resistance, Junction to Case - RthJA Thermal Resistance, Junction to Ambient - Tsold Soldering Temperature, Wave Soldering Only Al- - lowed At Leads Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified Static Characteristics V(BR)DSS VGS(th) IDSS Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current 600 2.1 - IG...