ICE22N65W
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified
Product Summary
ID V(BR)DSS rDS(ON)
Qg
TA = 25°C ID = 250uA VGS = 10V VDS = 480V
22A 650V 0.165Ω 82nC
Pin Description:
TO-247
G
Max Min Typ Typ
D
S
Symbol Parameter
Value
Unit Conditions
ID
ID, pulse EAS IAR
dv/dt
Continous Drain Current
Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness
VGS
Ptot Tj, Tstg
Gate Source Voltage
Power Dissipation Operating and Storage Temperature Mounting Torque
22 66 690 10 50
±20 ±30
208
-55 to +150 60
A A mJ A V/ns
V
W °C Ncm
TC = 25°C TC = 25°C ID = 11.5A Limited by Tjmax VDS = 480V, ID = 22A, Tj = 125°C Static AC (f>Hz) TC = 25°C
M 3 & 3.5 screws
Symbol Parameter
Values Min Typ Max
Unit Conditions
Thermal Characteristics
RthJC Thermal Resistance, Junction to Case RthJA Thermal Resistance, Junction to Ambient Tsold Soldering Temperature, Wave Soldering Only
Allowed At Leads
-
Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified
Static Characteristics
V(BR)DSS VGS(th) IDSS
Drain to Source Breakdown Voltage Gate Threshold Voltage
Zero Gate Voltage Drain Current
650 2.1 -
IGSS RDS(on)
Gate Source Leakage Current Drain to Source On-State Resistance
-
RGS Gate Resistance
-
- 0.6 - 50 - 260
3 0.1 0.145 0.42 4
3.9 1 100 100 0.165 -
°C/W °C
Leaded 1.6mm (0.063in.) from Case for 10s
V VGS = 0V, ID = 1mA VDS = VGS, ID = 250µA
µA VDS = 650V, VGS = 0V, Tj = 25°C VDS = 650V, VGS = 0V, Tj = 150°C
nA VGS = ±20v, VDS = 0V Ω VGS = 10V, ID = 11A, Tj = 25°C
VGS = 10V, ID = 11A, Tj = 150°C Ω f = 1 MHz, open drain
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email:
[email protected] 1
ICE22N65W
Symbol Parameter
Dynamic Characteristics
Ciss Coss Crss gfs td(on) Tr td(off ) tf
Input Capacitance Output Capacitance Reverse Transfer Capacitance Transconductance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
Gate Charge Characteristics
Qgs Qgd Qg Vplateau
Gate to Source Charge Gate to Drain Charge Gate Charge Total Gate Plateau Voltage
Reverse Diode
VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Irm Peak Reverse Recovery Current
Values Min Typ Max
Unit Conditions
- 2650 - 943 -8- 22 - 10 -5- 67 - 4.5 -
pF VGS = 0V, VDS = 25V, f = 1 MHz S VDS = >2*ID* RDS, ID = 11A
nS
VDS = 380V, VGS = 10V, ID = 22A, RG = 4Ω (External)
- 16 - 30 - 82 -5-
nC VDS = 480V, ID = 22A, VGS = 0 to 10V
V
- 1.0 1.2 - 423 -8- 34 -
V VGS = 0V, IS = IF ns
µC VRR = 480V, IS = IF, diF/dt = 100 A/µS A
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email:
[email protected] 2
ID - Drain Current (A) ID - Drain Current (A)
ICE22N65W
70 60 50 40
30 20 10 0
0
Output Characteristics VGS = 10V
5 10 15 VDS - Drain to Source Voltage (V)
7V 6V 5V
20
70
60 50 40 30 20 10 0
0
Transfer Characterstics
TJ = 150°C
25°C
2 468 VGS - Gate to Source Voltage (V)
10
RDS(on) - On State Resistance (mΩ) VGS - Gate to Source Voltage (V)
RDS(on) - On State Resistance (Normalized)
400 350 300 250
200 150 100 50
0 0
On State Resistance vs Drain Current VGS = 10V
20 40 ID - Drain Current (A)
60
On Resistance vs Junction Temperature 4.0
3.5
3.0 VGS = 10V ID = 11A
2.5
2.0
1.5 1.0
0.5 0.0
-50
-25
0 25 50 75 100 125 150 TJ - Junction Temperature (°C)
10 9 8 7 6 5
4
3
2 1 00
Gate Charge VDS = 480V
ID = 22A
20 40 60 80 Qg - Total Gate Charge (nC)
100
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email:
[email protected] 3
ICE22N65W
VGS(th) - Gate Threshold Voltage (Normalized)
1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4
-50
Gate Threshold Voltage vs. Junction Temperature ID = 250µA
-25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C)
Drain to Source Breakdown Voltage vs. Junction Temperature 1.2
1.1 ID = 1mA
1.0
0.9
ID - Drain Current (A)
C - Capacitance (pF)
100000 10000 1000 100
Capacitance Ciss Coss
10
0 0
Crss
100 200 300 400 500 VDS- Drain to Source Voltage (V)
600
Maximum Rate Forward Biased Safe Operating Area
100 Single Pulse
Tc = 25°C T = 150°C VGS = 10V
10
10us 100us
1ms 1 10ms
DC
0.1 RPaDSck(OaNg) LeimLimit it
Thermal Limit
V(BR)DSS - Drain to Source Breakdown Voltage (Normalized)
0.8 -50 -25
0 25 50 75 100 125 150 TJ - Junction Temperature (°C)
0.01 1
10 100 VDS- Drain to Source Voltage (V)
1.00
Transient Thermal Response - Junction to Case 0.5
0.2
0.1 0.10
0.05 0.02
1000
r(t) - Transit Thermal Resistance (Normalized)
0.01
0.00 1.0E-06
Single Pulse
Notes:
PDM
t1 t2
Duty Cycle,.