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ICE22N65W Dataheets PDF



Part Number ICE22N65W
Manufacturers Micross Components
Logo Micross Components
Description N-Channel MOSFET
Datasheet ICE22N65W DatasheetICE22N65W Datasheet (PDF)

ICE22N65W N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Product Summary ID V(BR)DSS rDS(ON) Qg TA = 25°C ID = 250uA VGS = 10V VDS = 480V 22A 650V 0.165Ω 82nC Pin Description: TO-247 G Max Min Typ T.

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ICE22N65W N-Channel Enhancement Mode MOSFET Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Product Summary ID V(BR)DSS rDS(ON) Qg TA = 25°C ID = 250uA VGS = 10V VDS = 480V 22A 650V 0.165Ω 82nC Pin Description: TO-247 G Max Min Typ Typ D S Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Source Voltage Power Dissipation Operating and Storage Temperature Mounting Torque 22 66 690 10 50 ±20 ±30 208 -55 to +150 60 A A mJ A V/ns V W °C Ncm TC = 25°C TC = 25°C ID = 11.5A Limited by Tjmax VDS = 480V, ID = 22A, Tj = 125°C Static AC (f>Hz) TC = 25°C M 3 & 3.5 screws Symbol Parameter Values Min Typ Max Unit Conditions Thermal Characteristics RthJC Thermal Resistance, Junction to Case RthJA Thermal Resistance, Junction to Ambient Tsold Soldering Temperature, Wave Soldering Only Allowed At Leads - Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified Static Characteristics V(BR)DSS VGS(th) IDSS Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current 650 2.1 - IGSS RDS(on) Gate Source Leakage Current Drain to Source On-State Resistance - RGS Gate Resistance - - 0.6 - 50 - 260 3 0.1 0.145 0.42 4 3.9 1 100 100 0.165 - °C/W °C Leaded 1.6mm (0.063in.) from Case for 10s V VGS = 0V, ID = 1mA VDS = VGS, ID = 250µA µA VDS = 650V, VGS = 0V, Tj = 25°C VDS = 650V, VGS = 0V, Tj = 150°C nA VGS = ±20v, VDS = 0V Ω VGS = 10V, ID = 11A, Tj = 25°C VGS = 10V, ID = 11A, Tj = 150°C Ω f = 1 MHz, open drain Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected] 1 ICE22N65W Symbol Parameter Dynamic Characteristics Ciss Coss Crss gfs td(on) Tr td(off ) tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Transconductance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Gate Charge Characteristics Qgs Qgd Qg Vplateau Gate to Source Charge Gate to Drain Charge Gate Charge Total Gate Plateau Voltage Reverse Diode VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Irm Peak Reverse Recovery Current Values Min Typ Max Unit Conditions - 2650 - 943 -8- 22 - 10 -5- 67 - 4.5 - pF VGS = 0V, VDS = 25V, f = 1 MHz S VDS = >2*ID* RDS, ID = 11A nS VDS = 380V, VGS = 10V, ID = 22A, RG = 4Ω (External) - 16 - 30 - 82 -5- nC VDS = 480V, ID = 22A, VGS = 0 to 10V V - 1.0 1.2 - 423 -8- 34 - V VGS = 0V, IS = IF ns µC VRR = 480V, IS = IF, diF/dt = 100 A/µS A Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected] 2 ID - Drain Current (A) ID - Drain Current (A) ICE22N65W 70 60 50 40 30 20 10 0 0 Output Characteristics VGS = 10V 5 10 15 VDS - Drain to Source Voltage (V) 7V 6V 5V 20 70 60 50 40 30 20 10 0 0 Transfer Characterstics TJ = 150°C 25°C 2 468 VGS - Gate to Source Voltage (V) 10 RDS(on) - On State Resistance (mΩ) VGS - Gate to Source Voltage (V) RDS(on) - On State Resistance (Normalized) 400 350 300 250 200 150 100 50 0 0 On State Resistance vs Drain Current VGS = 10V 20 40 ID - Drain Current (A) 60 On Resistance vs Junction Temperature 4.0 3.5 3.0 VGS = 10V ID = 11A 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) 10 9 8 7 6 5 4 3 2 1 00 Gate Charge VDS = 480V ID = 22A 20 40 60 80 Qg - Total Gate Charge (nC) 100 Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected] 3 ICE22N65W VGS(th) - Gate Threshold Voltage (Normalized) 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 -50 Gate Threshold Voltage vs. Junction Temperature ID = 250µA -25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Drain to Source Breakdown Voltage vs. Junction Temperature 1.2 1.1 ID = 1mA 1.0 0.9 ID - Drain Current (A) C - Capacitance (pF) 100000 10000 1000 100 Capacitance Ciss Coss 10 0 0 Crss 100 200 300 400 500 VDS- Drain to Source Voltage (V) 600 Maximum Rate Forward Biased Safe Operating Area 100 Single Pulse Tc = 25°C T = 150°C VGS = 10V 10 10us 100us 1ms 1 10ms DC 0.1 RPaDSck(OaNg) LeimLimit it Thermal Limit V(BR)DSS - Drain to Source Breakdown Voltage (Normalized) 0.8 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) 0.01 1 10 100 VDS- Drain to Source Voltage (V) 1.00 Transient Thermal Response - Junction to Case 0.5 0.2 0.1 0.10 0.05 0.02 1000 r(t) - Transit Thermal Resistance (Normalized) 0.01 0.00 1.0E-06 Single Pulse Notes: PDM t1 t2 Duty Cycle,.


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